Abstract: An operational amplifier and use of an operational amplifier is provided that includes an input differential amplifier, which is connected to a first input and to a second input and a differential output stage, which is connected to the input differential amplifier and a first output and a second output. The differential output stage has a first branch with two first transistors, whose drain and/or collector are connected to one another and to the first output. The differential output stage has a second branch with two second transistors, whose drain and/or collector are connected to one another and to the second output. The first gates and/or the first bases of the two first transistors in the first branch are connected to one another and to a first output of the input differential amplifier. The second gates and/or the second bases of the two second transistors in the second branch are connected to one another and to a second output of the input differential amplifier.

Abstract: An operational amplifier and use of an operational amplifier is provided that includes an input differential amplifier, which is connected to a first input and to a second input and a differential output stage, which is connected to the input differential amplifier and a first output and a second output. The differential output stage has a first branch with two first transistors, whose drain and/or collector are connected to one another and to the first output. The differential output stage has a second branch with two second transistors, whose drain and/or collector are connected to one another and to the second output. The first gates and/or the first bases of the two first transistors in the first branch are connected to one another and to a first output of the input differential amplifier. The second gates and/or the second bases of the two second transistors in the second branch are connected to one another and to a second output of the input differential amplifier.

Abstract: A trench capacitor, in particular for use in a semiconductor memory cell, has a trench formed in a substrate; an insulation collar formed in an upper region of the trench; an optional buried plate in the substrate region serving as a first capacitor plate; a dielectric layer lining the lower region of the trench and the insulation collar as a capacitor dielectric; a conductive second filling material filled into the trench as a second capacitor plate; and a buried contact underneath the surface of the substrate. The substrate has, underneath its surface in the region of the buried contact, a doped region introduced by implantation, plasma doping and/or vapor phase deposition. A tunnel layer, in particular an oxide, nitride or oxinitride layer, is preferably formed at the interface of the buried contact. A method for producing a trench capacitor is also provided.

Abstract: A trench capacitor, in particular for use in a semiconductor memory cell, has a trench formed in a substrate; an insulation collar formed in an upper region of the trench; an optional buried plate in the substrate region serving as a first capacitor plate; a dielectric layer lining the lower region of the trench and the insulation collar as a capacitor dielectric; a conductive second filling material filled into the trench as a second capacitor plate; and a buried contact underneath the surface of the substrate. The substrate has, underneath its surface in the region of the buried contact, a doped region introduced by implantation, plasma doping and/or vapor phase deposition. A tunnel layer, in particular an oxide, nitride or oxinitride layer, is preferably formed at the interface of the buried contact.