Abstract: A thin film integrated multilayer capacitor with substantially enhanced capacitance density suitable for Dynamic Random Access Memory (DRAM) and other integrated capacitor applications is formed into a trench or cavity structure with a completely self-aligned atomic layer deposition (ALD) process flow. Each conductor layer is etched with a wet etch to create recesses between the adjacent insulating layers, which recesses are seamlessly filled with dielectric using an ALD process, so that no part of the conductor is ever exposed to ambient atmosphere. Only silicon-based dielectric materials contact the silicon substrate, and the contact area between silicon and the capacitor is minimized both at the top and the bottom. The dielectric layers comprise Al2O3, ZrO2, or HfO2, which is deposited using an ALD process. Capacitance density is greatly enhanced to a C/? of above 1500 fF/?2.

Abstract: A General Metal Delivery Source (GMDS) for delivery of volatile metal compounds in gaseous form to processing apparatus has a reaction chamber holding a solid metal source material and connecting to the processing apparatus, and having an outlet for provision of the volatile metal compounds, a source heater coupled to the reaction chamber for heating said solid metal source material, a gas source for providing a reactive gas, a gas delivery conduit from the gas source to the reaction chamber for delivering gas species to the reaction chamber; and a plasma generation apparatus coupled to the gas delivery conduit. The plasma generation apparatus dissociates reactive gas molecules providing monatomic reactive species to the reaction chamber, and the monatomic reactive species combine with metal from the heated solid metal source material forming the volatile metal compounds.

Abstract: A General Metal Delivery Source (GMDS) for delivery of volatile metal compounds in gaseous form to processing apparatus has a reaction chamber holding a solid metal source material and connecting to the processing apparatus, and having an outlet for provision of the volatile metal compounds, a source heater coupled to the reaction chamber for heating said solid metal source material, a gas source for providing a reactive gas, a gas delivery conduit from the gas source to the reaction chamber for delivering gas species to the reaction chamber; and a plasma generation apparatus coupled to the gas delivery conduit. The plasma generation apparatus dissociates reactive gas molecules providing monatomic reactive species to the reaction chamber, and the monatomic reactive species combine with metal from the heated solid metal source material forming the volatile metal compounds.

Abstract: A General Metal Delivery Source (GMDS) for delivery of volatile metal compounds in gaseous form to processing apparatus has a reaction chamber holding a solid metal source material and connecting to the processing apparatus, and having an outlet for provision of the volatile metal compounds, a source heater coupled to the reaction chamber for heating said solid metal source material, a gas source for providing a reactive gas, a gas delivery conduit from the gas source to the reaction chamber for delivering gas species to the reaction chamber; and a plasma generation apparatus coupled to the gas delivery conduit. The plasma generation apparatus dissociates reactive gas molecules providing monatomic reactive species to the reaction chamber, and the monatomic reactive species combine with metal from the heated solid metal source material forming the volatile metal compounds.

Abstract: A thin film integrated multilayer capacitor with substantially enhanced capacitance density suitable for Dynamic Random Access Memory (DRAM) and other integrated capacitor applications is formed into a trench or cavity structure with a completely self-aligned atomic layer deposition (ALD) process flow. Each conductor layer is etched with a wet etch to create recesses between the adjacent insulating layers, which recesses are seamlessly filled with dielectric using an ALD process, so that no part of the conductor is ever exposed to ambient atmosphere. Only silicon-based dielectric materials contact the silicon substrate, and the contact area between silicon and the capacitor is minimized both at the top and the bottom. The dielectric layers comprise Al2O3, ZrO2, or HfO2, which is deposited using an ALD process. Capacitance density is greatly enhanced to a C/∈ of above 1500 fF/&mgr;2.

Abstract: A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: A method for growing a thin tungsten silicide film on a hydrated substrate in a reaction space introduces a tungsten halide precursor, where the halide is not fluorine, into the reaction space to the hydrated substrate to create, for example, a chlorine terminated substrate surface and deposit tungsten without scavenging silicon. A silicon hydride precursor is then introduced into the reaction space to the chloride terminated substrate surface to create a hydride terminated substrate surface and deposit silicon. The two preceding steps are repeated an integral number of times to form a tungsten silicide film on the substrate, wherein a reaction by-product is a hydrogen halide.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.

Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.

Abstract: A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.

Abstract: A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: A method and apparatus for fabricating a metal-insulator-metal capacitor by performing atomic layer deposition (ALD). A fully integrated process flow prevents electrode-dielectric contamination during an essential ex situ bottom electrode patterning step.

Abstract: A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.

Abstract: A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.

Abstract: A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.