Abstract: A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon semiconductor layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer (30). The exposed outer surface (28a) of the layer (28) is uniformly thinned to approximately 4 micrometers. Vertical interconnects or vias (49) are formed through the layer (28), and microelectronic transistor driver devices (42) and storage capacitors (47) are formed on the outer surface (28a) of the layer (28) in connection with the respective vias (49). A substrate (12) is adhered to the outer surface (28a) of the layer (28), and the carrier (52) is removed. Reflective metal back electrodes (20) are formed on the insulating layer (30) in connection with the respective vias (49).

Abstract: A silicon dioxide etch stop layer (30) is formed on an inner surface (28b) of a monocrystalline silicon layer (28), and a silicon carrier wafer (52) is bonded to the etch stop layer. The exposed inner surface (28a) of the monocrystalline layer (28) is uniformly thinned to approximately 4 micrometers. Front electrodes (20) in the form of heavily doped areas, and microelectronic transistor driver devices (42) for the electrodes (20) are integrally formed on the outer surface (28a) of the monocrystalline layer (28). A front plate (12) is bonded to the outer surface (28a) of the monocrystalline layer (28), and the carrier (52) is removed. The central portion of the etch stop layer (30) is removed from the inner surface (28b) of the monocrystalline layer (28), and the exposed central portion (28c) of the layer (28) is uniformly thinned to approximately 400 angstroms using plasma assisted chemical etching.

Abstract: A photosensitive layer of a liquid crystal light valve is made of a single crystal silicon wafer (14,70) bearingan irregular pattern of diodes (50a,50b, 60a,60b). The diodes are varied in size, shape and location so as to improve resolution, reduce interaction between the diode spatial pattern and the spatial pattern of input data, and, in one embodiment, to eliminate a difficult masking step. A masking step is eliminated by co-depositing a metal vapor and a silicon dioxide vapor to form random islands of cermets (50a,50b), each comprising an island of metal surrounded by a body of silicon dioxide. In other embodiments a pseudo-random mask is employed having an irregular pattern of holes (76) of varied sizes and locations.