Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Abstract: This disclosure relates to a dielectric film forming composition that includes a plurality of (meth)acrylate containing compounds, at least one fully imidized polyimide polymer, and at least one solvent.

Abstract: This disclosure relates to dielectric film forming compositions containing a) at least one fully imidized polyimide polymer; b) at least one metal-containing (meth)acrylates; c) at least one catalyst; and d) at least one solvent, as well as related processes and related products. The compositions can form a dielectric film that generates substantially no debris when the dielectric film is patterned by laser ablation process.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted linear alkenyl group and a substituted or unsubstituted linear alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01?/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01?/min in the developer at 25° C.

Abstract: This disclosure relates to dielectric film forming compositions containing a) at least one fully imidized polyimide polymer; b) at least one metal-containing (meth)acrylates; c) at least one catalyst; and d) at least one solvent, as well as related processes and related products. The compositions can form a dielectric film that generates substantially no debris when the dielectric film is patterned by laser ablation process.

Abstract: This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01 ?/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01 ?/min in the developer at 25° C.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted linear alkenyl group and a substituted or unsubstituted linear alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: A photoacid compound having the following general structure: R—O(CF2)nSO3X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q— wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

Abstract: A photoacid compound having the following general structure: