Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixels includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: There is provided an image sensor capable of minimizing level variations of a control signal inputted to a unit pixel. The image sensor includes a plurality of unit pixels, each supplied with a first power voltage for converting an inputted signal into an electrical signal; and a control block supplied with a second power voltage for providing control signals to each unit pixel in order to stably operate each unit pixel, wherein the control block includes a conversion unit for outputting the control signals under the first power voltage, not the second power voltage.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: An image sensor is disclosed, in which the image sensor changes the diameter of a lens from the center area of a chip to an edge thereof to obtain uniform sensitivity as a whole. The image sensor includes a plurality of light-receiving portions for converting a signal corresponding to the light of an object to an electrical signal, and a pixel array area having a plurality of micro lenses formed above the light receiving portions and respectively corresponding to the light-receiving portions to focus the light. In the image sensor, the respective micro lenses change their diameters from the center of the pixel array area to the edge thereof.

Abstract: An image sensor includes: a pixel array having a plurality of unit pixels arranged in a matrix form of rows and columns; and a plurality of power lines provided on the pixel array for providing the unit pixels with a power supply voltage, wherein the power lines are configured perpendicularly to a scan direction for outputting image data from the pixel array.

Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: There is provided an image sensor capable of minimizing level variations of a control signal inputted to a unit pixel. The image sensor includes a plurality of unit pixels, each supplied with a first power voltage for converting an inputted signal into an electrical signal; and a control block supplied with a second power voltage for providing control signals to each unit pixel in order to stably operate each unit pixel, wherein the control block includes a conversion unit for outputting the control signals under the first power voltage, not the second power voltage.

Abstract: A system on a chip (SoC) camera system includes a pixel array which has a color filter and converts an optically photographed image to an electrical analog image signal, an analog signal processing unit for adjusting the electrical analog image signal outputted from the pixel array to a predetermined level to thereby output a digital image signal, and a digital signal processing unit for performing white color compensation and color revision to make the digital image signal close to an original image, wherein the digital signal processing unit is integrated with the pixel array and the analog signal processing unit in one chip. The SoC camera system employs a complementary color filter adopting a progressive scanning scheme of reading all pixels at one time and outputting color signals to thereby obtain an image having improved resolution and color sensitivity.

Abstract: Image sensors and methods to construct and use image sensors are disclosed. In an example, an image sensor includes a pixel array, a data store to store data transmitted from the pixel array, an image signal processing unit to perform signal processing on the output of the data store to improve the performance of the image sensor, a defective pixel address storage unit to store an address of a defective pixel by using a fuse blowing technology, a controller for receiving address information of the defective pixels from the defective pixel address storage unit and controlling the operation of the image sensor, and a defective pixel compensation unit for receiving the address information of the defective pixels from the defective pixel address storage unit, substituting data of the defective pixels with data of normal pixels around the defective pixels, and providing the substituted data to the image signal processing unit.

Abstract: Disclosed is an apparatus for converting an analog image data into a digital image data in a CMOS image sensor including a pixel array having M (row line)×N (column line) color pixels, wherein the color pixels include a first color pixel for sensing a first color, a second color pixel for sensing a second color and a third pixel for sensing a third color.

Abstract: A CMOS image sensor is disclosed in which a charge storage gate is formed at one side of a photodiode region to increase charge capacity for each cell, thereby improving characteristics of a device. The CMOS image sensor includes a photodiode region generating image signal charges by converting image signals of light to electrical signals, and a charge storage gate formed near the photodiode region, wherein the charges of the photodiode region are partially or entirely transferred to a portion below the charge storage gate when the charges are generated, and the charges stored, when the charges are read out, are transferred to a read out node.

Abstract: A method for fabricating a CMOS image sensor having a characteristic of a reduced dark current includes the steps of: a) providing a semiconductor structure, wherein the semiconductor structure includes a photodiode and peripheral elements formed on a semiconductor substrate; b) forming an insulating layer on the semiconductor structure; c) forming a hydrogen containing dielectric layer on the insulting layer; d) diffusing hydrogen ions contained in the hydrogen containing dielectric layer into a surface of the photodiode, thereby removing a dangling bond; and e) removing the hydrogen containing dielectric layer.

Abstract: A CMOS image sensor comprising: a light receiving unit as a photoelectric conversion portion; a signal processing circuit unit; a first color filter layer array and a first microlens array layer, which are provided on an upper surface of the light receiving portion; and a second layer comprising at least one of a color filter layer and a microlens array layer, provided on a region of at least a portion of an upper surface of the signal processing circuit portion.

Abstract: The present invention relates a method of preventing forgery/alteration of securities and certification documents issued by communication networks and personal identification, financial transaction and medical insurance cards with certification codes in which the necessary information pertaining to the identification of an owner and issued material is encrypted and attached to the issued materials in order to prevent an unauthorized use or operation of the issued materials through the Internet, ARS services or communication networks.

Abstract: The present invention relates to a picture display using CMOS (Complementary Metal Oxide Semiconductor) image sensor; and, more particularly, to a CMOS image sensor having a testing circuit embedded therein and a method for verifying operation of the CMOS image sensor using the testing circuit. The CMOS image sensor according to the present invention includes a control/interface unit for controlling its operation sensor using a state machine and for interfacing the CMOS image sensor with an external system; a pixel array including a plurality of pixels sensing images from an object and generating analogue signals according to an amount of incident light; a converter for converting the analogue signals into digital signals to be processed in a digital logic circuit; and a testing circuit for verifying operations of the converter and the control/interface unit, by controlling the converter.

Abstract: An image sensor is disclosed, in which the image sensor changes the diameter of a lens from a center area of a chip to an edge of it to obtain uniform sensitivity as a whole. The image sensor comprises a plurality of light-receiving portions for converting a signal corresponding to the light of an object to an electric signal, and a pixel array area having a plurality of micro lenses formed above the light-receiving portions and respectively corresponding to the light-receiving portions to focus the light. In the image sensor, the respective micro lenses change their diameters from the center of the pixel array area to the edge of it.