Patents by Inventor Oh-Jung Kwon
Oh-Jung Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967267Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on a refresh rate control signal. Thus, the display device provides improved visibility.Type: GrantFiled: May 2, 2023Date of Patent: April 23, 2024Assignees: Samsung Display Co., Ltd., UNIST (Ulsan National Institute Of Science and Technology)Inventors: Hyo Sun Kim, Oh Sang Kwon, Seong Gyu Choe, Chang Yeong Han, Min Kyung Kim, You Ra Kim, Eun Jung Lee, Hyung Suk Hwang
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Patent number: 10975274Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.Type: GrantFiled: July 20, 2017Date of Patent: April 13, 2021Assignees: SAMSUNG DISPLAY CO., LTD., DONGGUAN DYT ELECTRONIC TAPE CO., LTD.Inventors: Sung Kim, Hyun Sook Kim, Jang Hwan Jeong, Sung Chan Jo, Kyung Lae Rho, Soo Im Jeong, Oh Jung Kwon, Sung Hwan Kim, Oh Nam Kwon, Jae Gwan Lee, Jung Hun Kim
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Patent number: 10192887Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.Type: GrantFiled: November 20, 2017Date of Patent: January 29, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Yun Y. Wang, Oh-Jung Kwon, Stephen G. Fugardi, Sean M. Dillon
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Patent number: 10170304Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to self-aligned nanotube structures and methods of manufacture. The structure includes at least one nanotube structure supported by a plurality of spacers and an insulator material between the spacers and contacting the at least one nanotube structure.Type: GrantFiled: October 25, 2017Date of Patent: January 1, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Oh-Jung Kwon, Claude Ortolland, Dominic Schepis, Christopher Collins
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Patent number: 10115725Abstract: A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective wet etching process is used to remove the hard mask material. Trench recess depth is effectively controlled.Type: GrantFiled: May 14, 2012Date of Patent: October 30, 2018Assignee: International Business Machines CorporationInventor: Oh-Jung Kwon
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Patent number: 10008421Abstract: A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.Type: GrantFiled: December 5, 2017Date of Patent: June 26, 2018Assignee: International Business Machines CorporationInventors: Donghun Kang, Kriteshwar K. Kohli, Oh-jung Kwon, Anita Madan, Conal E. Murray
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Publication number: 20180158748Abstract: A heat dissipation apparatus for a semiconductor module according to an exemplary embodiment of the present invention includes: a heatsink which is provided to be in surface-to-surface contact with a semiconductor module; a duct unit which includes a pair of wall members which extends perpendicularly to an edge of the other surface of the heatsink and a quadrangular box member which is formed in a quadrangular box shape opened at both ends thereof, in which two sides of the opened ends of the quadrangular box member are connected to the wall members, respectively, and any one surface, among surfaces for constituting the quadrangular box shape, is formed to be inclined; and an intake fan which is provided at the other end of the quadrangular box member, in which a vent hole is formed in the inclined lateral surface of the quadrangular box member.Type: ApplicationFiled: July 25, 2017Publication date: June 7, 2018Inventor: Oh Jung Kwon
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Publication number: 20180096904Abstract: A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.Type: ApplicationFiled: December 5, 2017Publication date: April 5, 2018Inventors: Donghun Kang, Kriteshwar K. Kohli, Oh-jung Kwon, Anita Madan, Conal E. Murray
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Publication number: 20180090516Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.Type: ApplicationFiled: November 20, 2017Publication date: March 29, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Yun Y. Wang, Oh-Jung Kwon, Stephen G. Fugardi, Sean M. Dillon
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Publication number: 20180022973Abstract: Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.Type: ApplicationFiled: July 20, 2017Publication date: January 25, 2018Inventors: Sung KIM, Hyun Sook KIM, Jang Hwan JEONG, Sung Chan JO, Kyung Lae RHO, Soo Im JEONG, Oh Jung KWON, Sung Hwan KIM, Oh Nam KWON, Jae Gwan LEE, Jung Hun KIM
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Patent number: 9870960Abstract: A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.Type: GrantFiled: December 18, 2014Date of Patent: January 16, 2018Assignee: International Business Machines CorporationInventors: Donghun Kang, Kriteshwar K. Kohli, Oh-jung Kwon, Anita Madan, Conal E. Murray
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Patent number: 9853055Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.Type: GrantFiled: March 30, 2016Date of Patent: December 26, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Yun Y. Wang, Oh-Jung Kwon, Stephen G. Fugardi, Sean M. Dillon
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Publication number: 20170287942Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.Type: ApplicationFiled: March 30, 2016Publication date: October 5, 2017Applicant: GLOBALFOUNDRIES INC.Inventors: Yun Y. Wang, Oh-Jung Kwon, Stephen G. Fugardi, Sean M. Dillon
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Publication number: 20160178679Abstract: A method includes measuring a difference between a primary X-ray diffraction peak and a secondary X-ray diffraction peak, the primary X-ray diffraction peak corresponds to an unstrained portion of a semiconductor substrate and the secondary X-ray diffraction peak corresponds to a strained portion of the semiconductor substrate, the difference between the primary X-ray diffraction peak and the secondary X-ray diffraction peak includes a delta shift peak that corresponds to changes in a crystal lattice caused by a stress applied to the strained portion of the semiconductor substrate, the delta shift peak includes variations in a deep trench capacitance.Type: ApplicationFiled: December 18, 2014Publication date: June 23, 2016Inventors: Donghun Kang, Kriteshwar K. Kohli, Oh-jung Kwon, Anita Madan, Conal E. Murray
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Patent number: 9269607Abstract: Embodiments of the present invention provide structures and methods for controlling stress in semiconductor wafers during fabrication. Features such as deep trenches (DTs) used in circuit elements such as trench capacitors impart stress on a wafer that is proportional to the surface area of the DTs. In embodiments, a corresponding pattern of dummy (non-functional) DTs is formed on the back side of the wafer to counteract the electrically functional DTs formed on the front side of a wafer. In some embodiments, the corresponding pattern on the back side is a mirror pattern that matches the functional (front side) pattern in size, placement, and number. By creating the minor pattern on both sides of the wafer, the stresses on the front and back of the wafer are in balance. This helps reduce topography issues such as warping that can cause problems during wafer fabrication.Type: GrantFiled: June 17, 2014Date of Patent: February 23, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Edward Engbrecht, Donghun Kang, Rishikesh Krishnan, Oh-jung Kwon, Karen A. Nummy
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Patent number: 9240452Abstract: An array or moat isolation structure for eDRAM with heterogeneous deep trench fill and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method further includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method further includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method further includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method further includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region.Type: GrantFiled: January 7, 2014Date of Patent: January 19, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Naoyoshi Kusaba, Oh-jung Kwon, Zhengwen Li, Hongwen Yan
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Publication number: 20150364362Abstract: Embodiments of the present invention provide structures and methods for controlling stress in semiconductor wafers during fabrication. Features such as deep trenches (DTs) used in circuit elements such as trench capacitors impart stress on a wafer that is proportional to the surface area of the DTs. In embodiments, a corresponding pattern of dummy (non-functional) DTs is formed on the back side of the wafer to counteract the electrically functional DTs formed on the front side of a wafer. In some embodiments, the corresponding pattern on the back side is a mirror pattern that matches the functional (front side) pattern in size, placement, and number. By creating the minor pattern on both sides of the wafer, the stresses on the front and back of the wafer are in balance. This helps reduce topography issues such as warping that can cause problems during wafer fabrication.Type: ApplicationFiled: June 17, 2014Publication date: December 17, 2015Inventors: Edward Engbrecht, Donghun Kang, Rishikesh Krishnan, Oh-jung Kwon, Karen A. Nummy
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Patent number: 9087927Abstract: A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.Type: GrantFiled: October 23, 2014Date of Patent: July 21, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Chudzik, Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-jung Kwon, Paul C. Parries, Hongwen Yan
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Patent number: 8963283Abstract: A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The method further includes lining the plurality of deep trenches and one or more isolation trenches with an insulator material. The method further includes filling the plurality of deep trenches and one or more isolation trenches with a conductive material on the insulator material. The deep trenches form deep trench capacitors and the one or more isolation trenches form one or more isolation plates that isolate at least one group or array of the deep trench capacitors from another group or array of the deep trench capacitors.Type: GrantFiled: March 31, 2014Date of Patent: February 24, 2015Assignee: International Business Machines CorporationInventors: Oh-Jung Kwon, Junedong Lee, Paul C. Parries, Dominic J. Schepis
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Publication number: 20150044853Abstract: A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Michael P. Chudzik, Bachir Dirahoui, Rishikesh Krishnan, Siddarth A. Krishnan, Oh-jung Kwon, Paul C. Parries, Hongwen Yan