Patents by Inventor Oh Young GONG

Oh Young GONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11844294
    Abstract: A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiX13 and and Bi2X2(3-x), and a second electrode formed on the resistance change layer, where X1 is a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, X2 is a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: December 12, 2023
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Jung Hyun Suk, Han Gil Sang, SangMyeong Lee, Won Bin Kim, Jae Myeong Lee, Jun Young Kim, Oh Young Gong, Jin Hyuk Choi
  • Publication number: 20220085289
    Abstract: A resistance access memory device includes a first electrode, a resistance change layer, formed on the first electrode, comprising a thin film containing BiX13 and and Bi2X2(3-x), and a second electrode formed on the resistance change layer, where X1 is a halogen element selected from the group consisting of F, Cl, Br, I, and combinations thereof, X2 is a chalcogen element selected from the group consisting of S, Se, Te, and combinations thereof, and x is a real number of 0 or more and less than 3.
    Type: Application
    Filed: August 13, 2021
    Publication date: March 17, 2022
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Jung Hyun SUK, Han Gil SANG, SangMyeong LEE, Won Bin KIM, Jae Myeong LEE, Jun Young KIM, Oh Young GONG, Jin Hyuk CHOI