Abstract: Systems subsystems and methods for controlling temperature of a laser diode (LD) stack including at least one LD bar of at least one LD emitter, for achieving a desired temperature of the LD stack and corresponding emission wavelength of the LD emitter(s) of the stack, using: a thermal unit (TU) for controlling temperature of the LD bar/stack; a measuring device for detecting updated ambient temperature in an area of the LD bar; and a main controller controlling operation of the TU, for achieving the desired temperature and its corresponding emission WL. At least one side of the TU is in direct thermal contact with a corresponding side of each LD stack, forming a contact surface area S1 between the TU and the LD stack, where the size of S1 corresponds to a size of an overall TU contact surface area S2 facing the LD stack to reduce temperature control speed.

Abstract: Systems subsystems and methods for controlling temperature of a laser diode (LD) stack including at least one LD bar of at least one LD emitter, for achieving a desired temperature of the LD stack and corresponding emission wavelength of the LD emitter(s) of the stack, using: a thermal unit (TU) for controlling temperature of the LD bar/stack; a measuring device for detecting updated ambient temperature in an area of the LD bar; and a main controller controlling operation of the TU, for achieving the desired temperature and its corresponding emission WL. At least one side of the TU is in direct thermal contact with a corresponding side of each LD stack, forming a contact surface area S1 between the TU and the LD stack, where the size of S1 corresponds to a size of an overall TU contact surface area S2 facing the LD stack to reduce temperature control speed.