Abstract: A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

Abstract: A semiconductor process apparatus includes an extreme ultraviolet (EUV) light source; a mask stage configured to support a mask; a substrate stage configured to support a substrate; an optical lighting system including a plurality of lighting mirrors configured to guide EUV light from the light source to the mask stage; an optical projection system including a plurality of projection mirrors configured to guide the EUV light from the mask stage to the substrate stage; a control unit configured to control the light source, the mask stage, the substrate stage, the optical lighting system, and the optical projection system; and an optical intensity adjuster configured to adjust the intensity of the EUV light. A first lighting mirror includes a plurality of unit mirrors, and the control unit is configured to measure a degree of degradation of each unit mirror and to replace at least one unit mirror.

Abstract: An extreme ultraviolet (EUV) light generating device includes a vessel having an internal space, a droplet generator generating droplets to be supplied to the internal space, a droplet emitter emitting the droplets generated by the droplet generator to the internal space, a laser light source generating a laser beam to generate EUV light by reaction with the droplets, a condensing mirror adjacent to the laser light source to at least partially surround the laser light source and concentrating EUV light on an intermediate focus (IF), and gas lock nozzles around the IF to respectively constitute rows and ejecting a flow control gas to the internal space, wherein a tilted direction of a gas lock nozzle in at least one of the rows is tilted in a direction consistent with a tilted direction of a sidewall of the vessel with respect to a central axis direction of the internal space.

Abstract: A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

Abstract: An extreme ultraviolet (EUV) light generating apparatus includes a vessel including a first end and a second end opposite to each other and providing an internal space extending from the first end to the second end, a concave mirror adjacent to the first end of the vessel, a droplet generator supplying a droplet to the internal space of the vessel, a laser light source irradiating a laser beam to cause the droplet to emit EUV light, and a gas jet receiving a flow control gas and spraying the received flow control gas into the internal space of the vessel. The gas jet includes a ring-shaped main body including nozzles spaced apart from one another in a circumferential direction. The nozzles spray the received flow control gas in a downward direction.

Abstract: An extreme ultraviolet (EUV) light generating apparatus includes a vessel including a first end and a second end opposite to each other and providing an internal space extending from the first end to the second end, a concave mirror adjacent to the first end of the vessel, a droplet generator supplying a droplet to the internal space of the vessel, a laser light source irradiating a laser beam to cause the droplet to emit EUV light, and a gas jet receiving a flow control gas and spraying the received flow control gas into the internal space of the vessel. The gas jet includes a ring-shaped main body including nozzles spaced apart from one another in a circumferential direction. The nozzles spray the received flow control gas in a downward direction.