Patents by Inventor Ok-hyun Nam
Ok-hyun Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11699587Abstract: The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al2O3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.Type: GrantFiled: November 27, 2019Date of Patent: July 11, 2023Assignee: KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATIONInventors: Ok Hyun Nam, Ui Ho Choi, Geun Ho Yoo
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Publication number: 20220285154Abstract: The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al2O3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.Type: ApplicationFiled: November 27, 2019Publication date: September 8, 2022Inventors: Ok Hyun NAM, Ui Ho CHOI, Geun Ho YOO
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Publication number: 20220051888Abstract: The present invention relates to a method of manufacturing an AlN-based transistor. An AlN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).Type: ApplicationFiled: November 27, 2019Publication date: February 17, 2022Inventors: Ok Hyun NAM, UI Ho CHOI
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Patent number: 9153737Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.Type: GrantFiled: August 27, 2010Date of Patent: October 6, 2015Assignees: Seoul Viosys Co., Ltd., Korea Polytechnic University Industry Academic Cooperation FoundationInventors: Ok Hyun Nam, Dong Hun Lee, Geun Ho Yoo
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Patent number: 9099609Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.Type: GrantFiled: August 27, 2010Date of Patent: August 4, 2015Assignees: Seoul Viosys Co., Ltd, Korea Polytechnic University Industry Academic Cooperation FoundationInventors: Ok Hyun Nam, Geun Ho Yoo
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Patent number: 8262227Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.Type: GrantFiled: March 23, 2011Date of Patent: September 11, 2012Assignee: Samsung LED Co., Ltd.Inventors: Joong-kon Son, Seoung-jae Im, Ok-hyun Nam
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Publication number: 20120205665Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.Type: ApplicationFiled: August 27, 2010Publication date: August 16, 2012Applicants: KOREA POLYTECHNIC UNIVERSITY Industry Academic Cooperation Foundation, SEOUL OPTO DEVICE CO., LTD.Inventors: Ok Hyun Nam, Dong Hun Lee, Geun Ho Yoo
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Publication number: 20120153257Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.Type: ApplicationFiled: August 27, 2010Publication date: June 21, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Ok Hyun Nam, Geun Ho Yoo
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Publication number: 20120145991Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.Type: ApplicationFiled: August 27, 2010Publication date: June 14, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Ok Hyun Nam, Jong Jin Jang
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Publication number: 20110170071Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.Type: ApplicationFiled: March 23, 2011Publication date: July 14, 2011Inventors: Joong-kon Son, Seoung-jae Im, Ok-hyun Nam
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Patent number: 7934835Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.Type: GrantFiled: May 15, 2007Date of Patent: May 3, 2011Assignee: Samsung LED Co., Ltd.Inventors: Joong-kon Son, Seoung-jae Im, Ok-hyun Nam
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Patent number: 7616674Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.Type: GrantFiled: August 31, 2006Date of Patent: November 10, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Han-youl Ryu, Ok-hyun Nam, Kyoung-ho Ha
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Publication number: 20070284530Abstract: Provided is a laser display device. The laser display device may include at least one light source configured to emit at least one laser beam, at least one scanning unit configured to perform a scanning with the at least one laser beam, and an image forming unit configured to generate excitation light and scattering light by receiving the at least one laser beam from the scanning unit to form an image.Type: ApplicationFiled: May 15, 2007Publication date: December 13, 2007Inventors: Joong-kon Son, Seoung-jae Im, Ok-hyun Nam
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Patent number: 7285857Abstract: Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.Type: GrantFiled: September 30, 2004Date of Patent: October 23, 2007Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Joon-seop Kwak, Tae-yeon Seong, Ok-hyun Nam, June-o Song, Dong-seok Leem
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Publication number: 20070237200Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.Type: ApplicationFiled: August 31, 2006Publication date: October 11, 2007Applicant: Samsung Electronics Co., Ltd.Inventors: Han-youl Ryu, Ok-hyun Nam, Kyoung-ho Ha
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Publication number: 20060093001Abstract: A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line.Type: ApplicationFiled: September 8, 2005Publication date: May 4, 2006Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Han-youl Ryu, Ok-hyun Nam, Kyoung-ho Ha
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Publication number: 20060093000Abstract: A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that centers of emission points of the three LDs form a line. Also, the multiple-wavelength LD includes a first LD, an insulating layer disposed on a substrate that extends from the first LD, and at least a second LD and a third LD bonded onto the insulating layer. The first, second, and third LDs are aligned such that centers of emission points are aligned.Type: ApplicationFiled: September 8, 2005Publication date: May 4, 2006Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Ok-hyun Nam, Kyoung-ho Ha, Han-youl Ryu
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Electrode layer, light emitting device including the same, and method of forming the electrode layer
Publication number: 20050167681Abstract: Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.Type: ApplicationFiled: November 2, 2004Publication date: August 4, 2005Applicants: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Joon-seop Kwak, Ok-hyun Nam, Tae-yeon Seong, June-o Song -
Patent number: 6901097Abstract: A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate, masks that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers that are formed on the masks, respectively, and first and second electrode that are formed on the bottom surface of the substrate and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered.Type: GrantFiled: July 5, 2002Date of Patent: May 31, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-geun Kim, Ok-hyun Nam
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Publication number: 20050087758Abstract: Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.Type: ApplicationFiled: September 30, 2004Publication date: April 28, 2005Applicants: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Joon-seop Kwak, Tae-yeon Seong, Ok-hyun Nam, June-o Song, Dong-seok Leem