Abstract: An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines (11b) extending in one of directions in which the pixels are aligned and in parallel to each other, a plurality of TFTs (5), one for each of the pixels, a protective film (16a) covering the TFTs (5), a plurality of pixel electrodes (18a) arranged in a matrix on the protective film (16a) and connected to the respective corresponding TFTs (5), and a plurality of auxiliary capacitors (6), one for each of the pixels. Each of the auxiliary capacitors (6) includes the corresponding capacitor line (11b), the corresponding pixel electrode (18a), and the protective film (16a) between the corresponding capacitor line (11b) and the corresponding pixel electrode (18a).

Abstract: Each of the auxiliary capacitors (6a) includes a capacitor line (11b) comprised of the same material as the gate electrode (11a) and provided in the same layer as the gate electrode (11a), the gate insulating film (12) provided so as to cover the capacitor line (11a), a capacitor intermediate layer (13c) provided using the oxide semiconductor and provided on the gate insulating film (12) so as to overlap the capacitor line (11b), and a capacitor electrode (15b) provided on the capacitor intermediate layer (13c), and the capacitor intermediate layer (13c) is conductive.

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract: A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).

Abstract: The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Abstract: The semiconductor device (100) according to the present invention includes a gate electrode (102) of a TFT, a gate insulating layer (103) formed on the gate electrode (102), an oxide semiconductor layer (107) disposed on the gate insulating layer (103), a protecting layer (108) formed on the oxide semiconductor layer (107) by a spin-on-glass technique, and a source electrode (105) and a drain electrode (106) disposed on the protecting layer (108). Via a first contact hole (131) formed in the protecting layer (108), the source electrode (105) is electrically connected to the oxide semiconductor layer (104), and via a second contact hole (132), the drain electrode (106) is electrically connected to the oxide semiconductor layer (104).

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract: A method includes: a step of forming a gate electrode (14) on a substrate (10a); a step of forming a gate insulating film (15) to cover the gate electrode (14), and then forming an In-Ga-Zn-O-based oxide semiconductor layer (16) in which a ratio of In:Ga:Zn in atomic % is 1:1:1 or 4:5:1 on the gate insulating film (15) to overlap the gate electrode (14); a step of forming a source electrode (19a) and a drain electrode (19b) on the oxide semiconductor layer (16) to overlap the gate electrode (14) and to face each other; and a step of performing an annealing process in an atmosphere containing steam (S) on the substrate (10a) provided with the source electrode (19a) and the drain electrode (19b).

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units.

Abstract: The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01?Zn/(In+Zn)?0.22.

Abstract: The semiconductor device (100) according to the present invention includes a gate electrode (102) of a TFT, a gate insulating layer (103) formed on the gate electrode (102), an oxide semiconductor layer (107) disposed on the gate insulating layer (103), a protecting layer (108) formed on the oxide semiconductor layer (107) by a spin-on-glass technique, and a source electrode (105) and a drain electrode (106) disposed on the protecting layer (108). Via a first contact hole (131) formed in the protecting layer (108), the source electrode (105) is electrically connected to the oxide semiconductor layer (104), and via a second contact hole (132), the drain electrode (106) is electrically connected to the oxide semiconductor layer (104).

Abstract: A display panel (50a) includes a TFT substrate (20a) in which a plurality of TFTs (5a) are provided, a counter substrate (30a) provided to face the TFT substrate (20a), and a display medium layer (40) provided between the TFT substrate (20a) and the counter substrate (30a), a plurality of pixels being provided so that each of the plurality of pixels is associated with a corresponding one of the TFTs (5a), wherein an oxide semiconductor layer (13) is provided in each of the TFTs (5a) as a channel, and an ultraviolet light absorbing layer (22) having a light transmitting property is provided in each of the pixels (P) so as to overlap the oxide semiconductor layer (13).

Abstract: A semiconductor device includes: a thin film transistor having a gate line (3a), a first insulating film (5), an island-shaped oxide semiconductor layer (7a), a second insulating film (9), a source line (13as), a drain electrode (13ad), and a passivation film; and a terminal portion having a first connecting portion (3c) made of the same conductive film as the gate line, a second connecting portion (13c) made of the same conductive film as the source line and the drain electrode, and a third connecting portion (19c) formed on the second connecting portion.

Abstract: An active matrix substrate (20a) includes a plurality of pixel electrodes (18a) arranged in a matrix, and a plurality of TFTs (5) each connected to a corresponding one of the pixel electrodes (18a), and each including a gate electrode (11a) provided on an insulating substrate (10a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (16a) provided on the gate insulating film (12a) and having a channel region (C) overlapping the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) of copper or copper alloy provided on the gate insulating film (12a) and separated from each other by the channel region (C) of the semiconductor layer (16a). The semiconductor layer (16a) is formed of an oxide semiconductor and covers the source electrode (15aa) and the drain electrode (15b).

Abstract: An active matrix substrate (20a) includes a plurality of pixel electrodes (18a) arranged in a matrix, and a plurality of TFTs (5) each connected to a corresponding one of the pixel electrodes (18a), and each including a gate electrode (11a) provided on an insulating substrate (10a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (16a) provided on the gate insulating film (12a) and having a channel region (C) overlapping the gate electrode (11a), and a source electrode (15aa) and a drain electrode (15b) of copper or copper alloy provided on the gate insulating film (12a) and separated from each other by the channel region (C) of the semiconductor layer (16a). The semiconductor layer (16a) is formed of an oxide semiconductor and covers the source electrode (15aa) and the drain electrode (15b).

Abstract: The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01?Zn/(In+Zn)?0.22.

Abstract: A semiconductor device (100) according to the present invention includes: an oxide semiconductor layer (31) formed on an insulating layer (21), the oxide semiconductor layer (31) containing at least one element selected from the group consisting of In, Zn, and Sn; first and second sacrificial layers (41a) and (41b) formed, with an interspace from each other, on the oxide semiconductor layer (31); a second electrode (52a) formed in contact with an upper face of the first sacrificial layer (41a) and an upper face of the oxide semiconductor layer (31); and a third electrode (52b) formed in contact with an upper face of the second sacrificial layer (41b) and an upper face of the oxide semiconductor layer (31). The first and second sacrificial layers (41a) and (41b) contain an oxide having at least one element selected from the group consisting of Zn, Ga, Mg, Ca, and Sr.

Abstract: A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).

Abstract: A TFT substrate (30a) including a TFT (5a) having: a gate electrode (14a) provided on a substrate (10a); a gate insulating film (15) provided to cover the gate electrode (14a); a semiconductor layer (16a) made of an oxide semiconductor provided on the gate insulating film (15) with a channel region (C) arranged to lie above the gate electrode (14a): and a source electrode (19aa) and a drain electrode (19b) provided on the semiconductor layer (16a) to be spaced from each other with the channel region (C) therebetween. A recess (R) is provided on the surface of the channel region (C) of the semiconductor layer (16a) to extend in the channel width direction.

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property and credibility, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Si, In, Zn, and O as constituent atoms.