Abstract: A Gunn diode is disclosed which comprises a first contact layer, a second contact layer, and an active layer based on a gallium nitride (GaN) semiconductor material having a base surface and a side surface non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer electrically contacts the side surface to form a side contact. The second contact layer forms an electrical contact for the base surface, so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer and the second contact layer at the side contact.

Abstract: An arrangement of carbon nanotubes (CNTs) is disclosed. The arrangement includes: a substrate (100); a first CNT block (110) rising up from the substrate (100); a second CNT block (120) rising up from the substrate (100), the first CNT block (110) and the second CNT block (120) being spaced apart from each other; and a CNT link (130) connecting the first CNT block (110) to the second CNT block (120). The CNTs of the CNT link (130) are aligned in a same direction as the CNTs of the first CNT block (110) and the second CNT block (120), and the CNT link (130) is configured as a CNT bridge.

Abstract: The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.

Abstract: A Gunn diode is disclosed which comprises a first contact layer (110), a second contact layer (120), and an active layer (130) based on a gallium nitride (GaN) semiconductor material having a base surface (132) and a side surface (135) non-parallel thereto. Optionally, related materials such as aluminum indium gallium nitride (AlInGaN) materials may also be used as the active layer. The first contact layer (110) electrically contacts the side surface (135) to form a side contact (115). The second contact layer (120) forms an electrical contact for the base surface (132), so that a maximum of the electric field strength is formed when an electric voltage is applied between the first contact layer (110) and the second contact layer (120) at the side contact (115).

Abstract: The invention relates to a Gunn diode comprising a first contact layer (110); a second contact layer (120); an active layer (130) based on a gallium nitride (GaN)-based semiconductor material, said active layer being formed between the first contact layer (110) and the second contact layer (120); a substrate (140) on which the active layer (130) is formed together with the first contact layer (110) and the second contact layer (120); and an optical inlet (150) for a laser (50) in order to facilitate or trigger a charge carrier transfer between extrema (210, 220) of the energy bands of the active layer (130) by means of laser irradiation.

Abstract: The subject of the invention is a spring sensor element 1, comprising carbon nanotubes 6 on a carrier 2, wherein the carbon nanotubes 6 are arranged in CNT blocks 10, 20, 30, 40, wherein the carbon nanotubes 6 of each CNT block 10, 20, 30, 40 preferably have the same length and the same alignment with respect to the carrier 2, wherein at least the highest one of the CNT blocks 10, 20, 30, 40 is arranged nearby at least two electric contacts 60, 61, 62. The spring sensor element 1 has at least one additional neighboring CNT block 20, 30, 40 of the height H2 in addition to the first CNT block 10 of the height H1, wherein the heights H1 and H2 differ by a factor of at least 2.

Abstract: The subject of the invention is a spring sensor element 1, comprising carbon nanotubes 6 on a carrier 2, wherein the carbon nanotubes 6 are arranged in CNT blocks 10, 20, 30, 40, wherein the carbon nanotubes 6 of each CNT block 10, 20, 30, 40 preferably have the same length and the same alignment with respect to the carrier 2, wherein at least the highest one of the CNT blocks 10, 20, 30, 40 is arranged nearby at least two electric contacts 60, 61, 62. The spring sensor element 1 has at least one additional neighboring CNT block 20, 30, 40 of the height H2 in addition to the first CNT block 10 of the height H1, wherein the heights H1 and H2 differ by a factor of at least 2.

Abstract: The subject of the invention is a spring sensor element 1, comprising carbon nanotubes 6 on a carrier 2, wherein the carbon nanotubes 6 are arranged in CNT blocks 10, 20, 30, 40, wherein the carbon nanotubes 6 of each CNT block 10, 20, 30, 40 preferably have the same length and the same alignment with respect to the carrier 2, wherein at least the highest one of the CNT blocks 10, 20, 30, 40 is arranged nearby at least two electric contacts 60, 61, 62. The spring sensor element 1 has at least one additional neighboring CNT block 20, 30, 40 of the height H2 in addition to the first CNT block 10 of the height H1, wherein the heights H1 and H2 differ by a factor of at least 2.

Abstract: A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact layers are more heavily doped than the active layer, and at least one outer contact layer disposed at an outer region of at least one of the first and second contact layers, the at least one outer contact layer being more heavily doped than the first and second contact layers, wherein the first and second contact layers, the active layer, and the at least one outer contact layer include a base material that is the same.