Abstract: The present invention relates to a cascode radio frequency power amplifier, including at least two cascaded MOS transistors formed in a mutual substrate, where the bulk nodes of the transistors are isolated from each other and connected to the respective source of each transistor. The present invention also teaches that the drain of the topmost transistor is connected to the power supply through an inductive load, and that the gate of each upper transistor is equipped with a self-biasing circuit connected at least between the drain and the gate of the respective upper transistor.

Abstract: A device for ESD protection of a high frequency circuit (1) of a semiconductor device comprises first (3) and second (4) p-type and first (6) and second (5) n-type JFET's, wherein the first p-type JFET (3) is connected with its gate to a high voltage source, its source to an input/output pad (2) of the semiconductor device, and its drain to the source of the first n-type JFET (6), the second p-type JFET (4) is connected with its gate to the high voltage source, its source to the drain of the second n-type JFET (5), and its drain to an input/output terminal of the circuit (1), the first n-type JFET transistor (6) is connected with its gate to ground (GND), and its drain to the input/output terminal, and the second n-type JFET transistor (5) is connected with its gate to ground (GND), and its source to the input/output pad (2).

Abstract: To protect a high-frequency integrated circuit (1) against higher voltages than normal operating voltages on an input/output terminal connected to a bonding pad (2), a semiconductor varistor (3) having low and essentially constant resistance for said normal operating voltages and higher resistance for said higher voltages is integrated between the bonding pad (2) and the input/output terminal together with the integrated circuit (1).

Abstract: A device for ESD (electrostatic discharge) protection of a circuit of a semiconductor device comprises a field effect transistor based varistor with gate, source and drain regions, wherein one of the source and drain regions is connected to an input/output pad of the semiconductor device, and the other one of the source and drain regions is connected to an input/output terminal of the circuit. A biasing circuit is connected to the gate region of the varistor to create an accumulation region below the gate of the varistor at normal operating voltages of said semiconductor device. The semiconductor device is preferably an integrated device on a single substrate.

Abstract: A device for ESD protection of a high frequency circuit (1) of a semiconductor device comprises first (3) and second (4) p-type and first (6) and second (5) n-type JFET's, wherein the first p-type JFET (3) is connected with its gate to a high voltage source, its source to an input/output pad (2) of the semiconductor device, and its drain to the source of the first n-type JFET (6), the second p-type JFET (4) is connected with its gate to the high voltage source, its source to the drain of the second n-type JFET (5), and its drain to an input/output terminal of the circuit (1), the first n-type JFET transistor (6) is connected with its gate to ground (GND), and its drain to the input/output terminal, and the second n-type JFET transistor (5) is connected with its gate to ground (GND), and its source to the input/output pad (2).

Abstract: To protect a high-frequency integrated circuit (1) against higher voltages than normal operating voltages on an input/output terminal connected to a bonding pad (2), a semiconductor varistor (3) having low and essentially constant resistance for said normal operating voltages and higher resistance for said higher voltages is integrated between the bonding pad (2) and the input/output terminal together with the integrated circuit (1).

Abstract: Electrical connection pads for integrated semiconductor circuits have a protective diode formed by a doped region located in a well of opposite doping and another protective diode formed by a well which surrounds another doped region of the same doping type as a contact area and is surrounded by another well of oppositive doping. The doped regions are connected to the pad and are continuous. Narrow strips extend at or along a portion of the periphery of the pad. Also, the well for which the other doped region serves as a contact, has a strip-shape and is located at the periphery of the pad. The other doped region is also used as a contact for forming an electrical resistor connected to an input/output path of the integrated circuit. The resistor is formed in the well surrounding the other doped region.

Abstract: A tubular compact (14) obtained by compacting a powder is applied with one circumferential surface (16) at a minimum distance required for said application, from an abutment surface (15) corresponding to said one circumferential surface (16). The space between said one circumferential surface (16) and the abutment surface (15) is evacuated, such that the compact (14), while undergoing a certain deformation to bridge said space, is sucked against the abutment surface (15) so as to be firmly retained against it.

Abstract: An isostatic press acts against a molding tool (4,5,11,12,32,33) enclosed in the pressing chamber of the press, the cavity (4) of the press tool being defined in the press by an enveloping wall (5) of an elastomeric material and two end walls (11,33) meeting the enveloping wall (5). The dry pressing chamber of the press is defined by a radially deformable elastomeric jacket (6) exercising pressure against the enveloping wall (5) of the molding tool, and two press end structures (2,3) meeting the pressing chamber jacket (6) and carrying the end walls (33,11) of the molding tool. At least one end wall (33,11) is carried by an adjacent end structure (3,2) via an elastomeric element (31). The elastomeric element is disposed with its peripheral edge exposed against, and lying adjacent the deformable elastomeric jacket (6) of the pressing chamber.

Abstract: An isostatic press includes a closed press frame, there being a pressure chamber bearing against a first interior portion of the frame. A conveyor path for pressure chamber closures (3) each carrying a press tool part, extends through the frame under the pressure chamber, displacement means being arranged for lifting in the plane of the frame a chamber closure (3) into contact with the pressure chamber. During pressurization of the pressure chamber (1) the closure (3) is carried by two separate support legs (4,5) pivotably mounted in the plane of the frame, the conveyor path extending between the legs. The closure (3) is carried in the plane of the frame by a portion (72) of the conveyor path, which constitutes the lower press table of the press and is supported by the legs. The free end surfaces of the legs may have an arcuate contour in the plane of the frame and coact with complementally formed surfaces on the underside of said portion (72).

Abstract: A plant for cold isostatic pressing of powder to pressed bodies includes a dry isostatic press, a plurality of press tools, a circulation conveyor path (2) for the tools and means for advancing the tools (3) along the path (2). The path (2) includes a first and a second straight section (21,22). On one side of the press there extend a plurality of third straight mutually parallel conveyor sections (23) at right angles to the sections (21,22). Each such third conveyor section (23) extends through an associated filling station (10). A plurality of fourth conveyor sections (24) extend parallel and at right angles to the first and the second conveyor sections (21,22) on the other side of the press. Each fourth conveyor section (24) extends through an associated emptying station (11).

Abstract: A moulding tool unit for semi-isostatic compaction of a powder has a mould cavity (14) defined by an elastomeric jacket (121). The jacket (121) is surrounded with clearance by an elastomeric sleeve (122) which is sealingly joined to the jacket (121). The space (123) between the sleeve (122) and jacket (121 ) is filled with an isostatic pressure translating medium such as a hydraulic liquid (127). The jacket (121) may be supported in a direction towards the sleeve (122) by a stiff jacket (125) having perforations (126) through which the hydraulic liquid (127) can flow. The unit is adapted such that for a pressing operation it can be inserted with a small clearance and pressurized in the dry pressing chamber of a hydraulic press.