Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element (20) includes a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase ?, and a capping layer (25, 85) made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective.

Abstract: A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective.

Abstract: The disclosure relates to an optical correction arrangement including at least one optical element and at least one irradiation mechanism for the targeted local irradiation of the optical element with electromagnetic heating radiation for the targeted local heating of the optical element. The optical correction arrangement also includes a mechanism for dissipating the thermal energy introduced into the optical element by the at least one irradiation mechanism. The disclosure furthermore relates to a projection exposure apparatus for semiconductor lithography including an optical correction arrangement according to the disclosure.

Abstract: A reflective optical element of an optical system for EUV lithography and an associated manufacturing method. The reflective optical element (20) includes a multilayer system (23, 83) for reflecting an incident electromagnetic wave having an operating wavelength in the EUV range, the reflected wave having a phase ?, and a capping layer (25, 85) made from a capping layer material. The method includes determining a dependency according to which the phase of the reflected wave varies with the thickness d of the capping layer, determining a linearity-region in the dependency in which the phase of the reflected wave varies substantially linearly with the thickness of the capping layer, and creating a thickness profile in the capping layer such that both the maximum thickness and the minimum thickness in the thickness profile are in the linearity-region.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: Method for setting an illumination setting in an illumination optical unit comprising at least one controllable correction device, which includes a multiplicity of adjustable correction elements for influencing the transmission, wherein the illumination setting is varied for adapting a predetermined imaging parameter in the region of an image field.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.