Abstract: Advantageous microwave-assisted methods for synthesis of fluorinated phthalocyanines are provided. The microwave-assisted methods offer enhanced yields, substantially eliminate reaction solvents, and facilitate purification relative to conventional synthesis techniques. Typical implementation involve a reaction mixture that includes perfluoro-phthalonitrile that is reacted in a vessel with application of microwave energy for a reaction period sufficient to yield a fluorinated phthalocyanine. The fluorinated phthalocyanines synthesized according to the disclosed microwave-assisted methods have wide ranging applications, e.g., corrosion-related applications, coating-related applications, catalysis, and the production of optical and electronic materials.

Abstract: The invention relates to a method for producing anellated carbo- or heterocyclic aromatic compounds, which is based on the reduction of the corresponding diketone as starting compound. The reduction agent is thereby used in a strong molar excess, which represents a significant simplification in implementation of the method relative to the methods known from prior art.

Abstract: The invention relates to substrates which, at least in regions on a surface, are provided with a coating of a metal, a method for producing such substrates and the use thereof. It is thereby the object of the invention to improve the adhesion of a coating of a metal on electrically non-conducting substrates or layers disposed on substrates. However, further properties can also be improved. For this purpose, the substrates are provided on their surface or on an electrically non-conducting layer with an intermediate layer which improves the adhesion, the coating with the metal being formed in turn on said intermediate layer. On the intermediate layer, a further layer comprising a semiconducting material or material mixture is formed at least in regions. The intermediate layer is formed from a metal oxide and/or a sulphide, the metal oxide and/or sulphide for the further layer which comprises a semiconducting material or material mixture having an injection barrier of less than equals 0.6 eV.