Abstract: A freeze dryer that includes a product chamber configured to accommodate products to be freeze-dried; a condenser connected to the product chamber and configured to trap water during a freeze-drying process; a product chamber cooling circuit configured to cool the product chamber, the product chamber cooling circuit having a first heat transfer fluid; a condenser cooling circuit configured to cool the condenser, the condenser cooling circuit having a second heat transfer fluid and being separate from the product chamber cooling circuit; a first additional cooling circuit having carbon dioxide or ammonia or liquid nitrogen as refrigerant; and a first heat exchanger configured to transfer heat between the condenser cooling circuit and the first additional cooling circuit.

Abstract: The present invention relates to an improved cell culture additive with a content of polyamines and iron, media containing it and processes for using it for an improved cell growth, cell viability or cellular productivity.

Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.

Abstract: The invention relates to a method for producing vertical electrical connections in semiconductor wafers, the method including the following steps: application of a protective resist to the wafer front side; patterning of the protective resist such that the contacts to be connected to the wafer rear side become free; laser drilling of passage holes at the contact connection locations from the wafer rear side through the semiconductor substrate, the active layers and the contacts to be connected on the wafer front side; cleaning of the wafer; application of a plating base to the wafer rear side and into the laser-drilled passage holes; application of gold by electrodeposition onto the metallized wafer rear side and the passage holes; resist stripping of the protective resist; and application of an antiwetting layer in the region of the entrance openings of the passage holes at the wafer rear side.

Abstract: The present invention relates to an improved cell culture additive with a content of polyamines and iron, media containing it and processes for using it for an improved cell growth, cell viability or cellular productivity.

Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.