Abstract: A freeze dryer that includes a product chamber configured to accommodate products to be freeze-dried; a condenser connected to the product chamber and configured to trap water during a freeze-drying process; a product chamber cooling circuit configured to cool the product chamber, the product chamber cooling circuit having a first heat transfer fluid; a condenser cooling circuit configured to cool the condenser, the condenser cooling circuit having a second heat transfer fluid and being separate from the product chamber cooling circuit; a first additional cooling circuit having carbon dioxide or ammonia or liquid nitrogen as refrigerant; and a first heat exchanger configured to transfer heat between the condenser cooling circuit and the first additional cooling circuit.

Abstract: The present invention relates to an improved cell culture additive with a content of polyamines and iron, media containing it and processes for using it for an improved cell growth, cell viability or cellular productivity.

Abstract: The present invention relates to methods for the cultivation of a population of cells in a serum free cell culture medium, wherein the population of cells has a cell concentration of less than 100 cells/ml, wherein a serum free cell culture medium containing recombinant albumin and recombinant transferrin is used.

Abstract: The invention relates to a method for producing vertical electrical connections in semiconductor wafers, the method including the following steps: application of a protective resist to the wafer front side; patterning of the protective resist such that the contacts to be connected to the wafer rear side become free; laser drilling of passage holes at the contact connection locations from the wafer rear side through the semiconductor substrate, the active layers and the contacts to be connected on the wafer front side; cleaning of the wafer; application of a plating base to the wafer rear side and into the laser-drilled passage holes; application of gold by electrodeposition onto the metallized wafer rear side and the passage holes; resist stripping of the protective resist; and application of an antiwetting layer in the region of the entrance openings of the passage holes at the wafer rear side.

Abstract: The present invention relates to methods for the cultivation of a population of cells in a serum free cell culture medium, wherein the population of cells has a cell concentration of less than 100 cells/ml, wherein a serum free cell culture medium containing recombinant albumin and recombinant transferrin is used.

Abstract: The present invention relates to an improved cell culture additive with a content of polyamines and iron, media containing it and processes for using it for an improved cell growth, cell viability or cellular productivity.

Abstract: The invention relates to a method for producing vertical electrical connections (micro-vias) in semiconductor wafers for the fabrication of semiconductor components. The method is characterized by the following steps: —application of a protective resist to the wafer front side—patterning of the protective resist on the wafer front side such that the contacts to be connected to the wafer rear side become free—laser drilling of passage holes at the contact connection locations from the wafer rear side through the semiconductor substrate, the active layers and the contacts to be connected on the wafer front side—cleaning of the wafer (debris removal)—application of a plating base to the wafer rear side and into the laser-drilled passage holes—application of gold by electrodeposition onto the metallized wafer rear side and the passage holes—resist stripping of the protective resist—application of an antiwetting layer in the region of the entrance openings of the passage holes at the wafer rear side.