Patents by Inventor Olaf M. J. van 't Erve

Olaf M. J. van 't Erve has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11894449
    Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.
    Type: Grant
    Filed: September 28, 2022
    Date of Patent: February 6, 2024
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van't Erve
  • Patent number: 11862716
    Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.
    Type: Grant
    Filed: September 28, 2022
    Date of Patent: January 2, 2024
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
  • Publication number: 20230264972
    Abstract: A nano-thin BixOySez low-temperature oxygen transporter membrane for oxygen transport, separation, and two-dimensional (2D) material manipulation comprising a material comprising a compound of BixOySez and R3m bismuth oxide (Bi2O3). A method of making a nano-thin BixOySez low-temperature oxygen transporter membrane for oxygen transport, separation, and two-dimensional (2D) material manipulation comprising providing an oxygen environment, providing Bi2Se3, processing the Bi2Se3 in the oxygen environment, incorporating oxygen, removing selenium, creating a structural change, and creating a compound of BixOySez and R3m bismuth oxide (Bi2O3), wherein the material transports oxygen at room temperature.
    Type: Application
    Filed: February 23, 2023
    Publication date: August 24, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Zachariah B. Hennighausen, Bethany Hudak, Olaf M.J. van 't Erve, Madeleine Phillips
  • Patent number: 11605410
    Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: March 14, 2023
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van 't Erve, Steven P. Bennett, Adam L. Friedman
  • Publication number: 20230028020
    Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.
    Type: Application
    Filed: September 28, 2022
    Publication date: January 26, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
  • Publication number: 20230014134
    Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.
    Type: Application
    Filed: September 28, 2022
    Publication date: January 19, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
  • Publication number: 20220367798
    Abstract: A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.
    Type: Application
    Filed: March 9, 2022
    Publication date: November 17, 2022
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Zachariah B. Hennighausen, Kathleen M. McCreary, Olaf M.J. van 't Erve, Berend T. Jonker
  • Patent number: 11476353
    Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 18, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
  • Patent number: 11280856
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: March 22, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Patent number: 11156678
    Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: October 26, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
  • Publication number: 20210327486
    Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 21, 2021
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M.J. van 't Erve, Steven P. Bennett, Adam L. Friedman
  • Patent number: 11074950
    Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.
    Type: Grant
    Filed: April 13, 2019
    Date of Patent: July 27, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van 't Erve, Steven P. Bennett, Adam L. Friedman
  • Publication number: 20210109171
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 15, 2021
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Publication number: 20200395156
    Abstract: Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase having a lower metamagnetic transition temperature than the continuous phase. Also disclosed herein is a method of: providing an article having a substrate and a layer having a continuous phase of an antiferromagnetic FeRh alloy disposed on the substrate and directing an ion source at one or more portions of the alloy to create one or more discrete phases having a lower metamagnetic transition temperature than the continuous phase.
    Type: Application
    Filed: June 11, 2020
    Publication date: December 17, 2020
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Steven P. Bennett, Cory D. Cress, Joseph Prestigiacomo, Olaf M. J. van 't Erve
  • Patent number: 10852370
    Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: December 1, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
  • Patent number: 10663773
    Abstract: The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: May 26, 2020
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van 't Erve, Connie H. Li, Berend T. Jonker, Aubrey T. Hanbicki, Kathleen M. Mccreary
  • Publication number: 20190333559
    Abstract: A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.
    Type: Application
    Filed: April 13, 2019
    Publication date: October 31, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M.J. van 't Erve, Steven P. Bennett, Adam L. Friedman
  • Publication number: 20190265312
    Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.
    Type: Application
    Filed: February 13, 2019
    Publication date: August 29, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
  • Patent number: 10261139
    Abstract: A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: April 16, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
  • Patent number: 10236365
    Abstract: A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: March 19, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Adam L. Friedman, Olaf M. J. van 't Erve, Jeremy T. Robinson, Berend T. Jonker, Keith E. Whitener