Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Abstract: A method for directly electrically generating and detecting spin polarization in topological insulators comprising depositing a first and fourth contact on a layer of Bi2Se3 and applying a current between the contacts, which creates a net spin polarization due to spin-momentum locking. A second (comprising ferromagnet/tunnel barrier) and third contact are deposited for detecting the spin polarization. A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Abstract: A method of making a graphene spin filter device by chemical vapor deposition comprising providing a first crystalline ferromagnetic metal surface, performing chemical vapor deposition and growing a graphene film on the first ferromagnetic metal surface, and depositing a second ferromagnetic film on the graphene film. A graphene spin filter device wherein the graphene is grown by chemical vapor deposition comprising a first crystalline ferromagnetic metal surface, a graphene film grown by chemical vapor deposition on the first ferromagnetic metal surface, and a second ferromagnetic film on the graphene film.