Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The present invention relates to a multi-chip device comprising a plurality of chip stacks each including a plurality of single chips stacked on each other, wherein the stacked single chips are electrically interconnected by one or more through-chip-connection extending through at least one of the single chips and a substrate providing one or more first contact elements each of which is in contact with one of the through-chip-connections and providing one or more second contact elements being in electrical contact with the first contact elements, wherein the plurality of chip stacks are stacked onto each other and wherein the second contact elements of one of the chip stacks each being arranged to be in contact to one or more third contact elements of an adjacent one of the chip stacks.

Abstract: The present invention relates to a multi-chip device comprising a plurality of chip stacks each including a plurality of single chips stacked on each other, wherein the stacked single chips are electrically interconnected by one or more through-chip-connection extending through at least one of the single chips and a substrate providing one or more first contact elements each of which is in contact with one of the through-chip-connections and providing one or more second contact elements being in electrical contact with the first contact elements, wherein the plurality of chip stacks are stacked onto each other and wherein the second contact elements of one of the chip stacks each being arranged to be in contact to one or more third contact elements of an adjacent one of the chip stacks.

Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.

Abstract: An electro-optical data transmission module comprises at least a first SMT housing (11) and a second SMT housing (13). A surface-emitting laser light emitter chip is accommodated in the first SMT housing (11), and a light-sensitive light receiver chip is accommodated in the second SMT housing (13). By virtue of the modular design which is formed from at least two individual SMT housings, the electro-optical data transmission module can be implemented with a minimum size.

Abstract: The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.

Abstract: A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.

Abstract: Semiconductor chips are produced from a wafer. The semiconductor chips are separated from one another by etching the wafer all the way through, by a dry etching process, in defined separation zones between the semiconductor chips. Initially, first etching trenches for separating the p-n junctions are etched into the wafer. Then, second etching trenches are etched from the opposite side of the wafer until the individual semiconductor chips are completely separated.