Abstract: An optical broadband transmission device for the broadband transmission of data streams between a supply node and a user node. The device comprises an optical fiber for the broadband transmission of data streams between the fiber node and the user node, and a first optical transceiver to the supply node and to the first end of the optical fiber. A second transceiver is connected to the user node and to the second end of the optical fiber. The first and second optical transceiver are designed for transmitting and receiving, respectively, data streams on different optical carrier wavelengths via the optical fiber.

Abstract: An electro-optical data transmission module comprises at least a first SMT housing (11) and a second SMT housing (13). A surface-emitting laser light emitter chip is accommodated in the first SMT housing (11), and a light-sensitive light receiver chip is accommodated in the second SMT housing (13). By virtue of the modular design which is formed from at least two individual SMT housings, the electro-optical data transmission module can be implemented with a minimum size.

Abstract: An electro-optical data transmission module comprises at least a first SMT housing (11) and a second SMT housing (13). A surface-emitting laser light emitter chip is accommodated in the first SMT housing (11), and a light-sensitive light receiver chip is accommodated in the second SMT housing (13). By virtue of the modular design which is formed from at least two individual SMT housings, the electro-optical data transmission module can be implemented with a minimum size.

Abstract: The invention relates to a method for producing a light-emitting component. A sequence of layers including at least one active layer is formed on the front face of a basic substrate consisting of semiconductor material. Subsequently, the basic substrate is at least partially removed and the sequence of layers is connected to an external substrate. The basic substrate is removed by wet-chemical etching in an etching agent that acts selectively on the material of the basic substrate. A first metallic contact layer is then applied to an end surface of the sequence of layers, and a second metallic contact layer is applied to an end surface of the external substrate. The sequence of layers is connected to the external substrate by connecting the first metallic contact layer to the second metallic contact layer using heat, by means of eutectic bonding.

Abstract: A method for producing at least one semiconductor body by metal organic vapor phase epitaxy (MOVPE). The semiconductor body is formed of a layer sequence with an active zone applied to a semiconductor wafer. By dry etching, the layer sequence is provided with at least one mesa trench whose depth is at least great enough that the active zone of the layer sequence is severed. Next, the composite including the semiconductor wafer and the layer sequence is severed in such a way that the at least one semiconductor body is created with at least one mesa edge.