Abstract: Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

Abstract: Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.

Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.

Abstract: Semiconductor component comprising: a silicon containing layer (1), at least one graphene layer (3, 3?, 3?, 3?41 ), and a functional layer (2, 2?, 2?, 2??) between the silicon containing layer (1) and the graphene layer (3, 3?, 3?, 3??), wherein the at least one graphene layer (3?, 3?, 3??) is deposited directly on the functional layer (2, 2?, 2?, 2??) to form a layer system (6, 6?, 6?, 6??) with the functional layer (2, 2?, 2?, 2??) , and the functional layer (2, 2?, 2?, 2??) includes at least one dielectric material having a dielectric constant k in a range between K=3 to K=400, and a conductance of the functional layer (2, 2?, 2?, 2??) in the layer system (6, 6?, 6?, 6??) is below a conductance of the graphene layer (3, 3?, 3?, 3??).