Patents by Inventor Ole Bosholm

Ole Bosholm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device
    Patent number: 7785935
    Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.
    Type: Grant
    Filed: November 13, 2007
    Date of Patent: August 31, 2010
    Assignee: Qimonda AG
    Inventors: Ole Bosholm, Marco Lepper, Goetz Springer, Detlef Weber, Grit Bonsdorf, Frank Pietzschmann
  • Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device
    Publication number: 20090121314
    Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.
    Type: Application
    Filed: November 13, 2007
    Publication date: May 14, 2009
    Inventors: Ole Bosholm, Marco Lepper, Goetz Springer, Detlef Weber, Grit Bonsdorf, Frank Pietzschmann