Abstract: The present invention relates to a method for pre-processing semiconducting thermoelectric materials for metallization, interconnection and bonding to form a thermoelectric device, and thermoelectric devices utilising the pre-processed processing semiconducting thermoelectric materials made by the method, where a cost-effective, simple and resilient interconnection and bonding of semiconducting thermoelectric materials to the electrodes of thermoelectric devices is obtained by employing the solid-liquid interdiffusion bonding concept in combination with use of an adhesion layer/diffusion barrier layer/adhesion layer structure (interchangeably also termed as; the ADA-structure) in-between the solid-liquid interdiffusion bonding layers and the semiconducting thermoelectric material.