Abstract: A laser produced plasma (LPP) light source comprises a rotating target assembly supplying a target into an interaction zone with a focused beam of a high-repetition-rate pulsed laser. High effective cooling of the light source is provided by thermal radiation of a peripheral part of the rotating target assembly and through a meander-shaped gap between the rotating target assembly and a fixed heat exchanger with a gas blowing through the slit gap. In an embodiment, a sealing between the vacuum chamber and a shaft of rotating drive unit is provided by a magnetic fluid seal (MFS) with an additional heat exchanger. A heat transfer from the rotating target assembly is provided through the shaft and MFS to additional heat exchanger and by convection air cooling of a counterweight of the rotating target assembly fixed on the shaft. High brightness and high output power of LPP light source are provided.

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle ? equal to or less than 3×10?5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz. In order to localize the plasma, a standing wave is formed near the carrier and plasma layers are formed in the antinodes thereof in such a way that the sizes thereof are adjustable.

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle ? equal to or less than 3×10?5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz.

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle ? equal to or less than 3×10?5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz.

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle ? equal to or less than 3×10?5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz.