Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: Embodiments of the invention include a light emitting device, a first wavelength converting material, and a second wavelength converting material. The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material is spaced apart from the light emitting device.

Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: Embodiments of the invention include a light emitting device (LED 10), a first wavelength converting material (13, in a matrix 14 to form a layer 12), and a second wavelength converting material (forming layer 16). The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material (13) is spaced apart from the light emitting device (10).

Abstract: A method according to embodiments of the invention includes disposing a support layer (32) on a surface of a wavelength converting ceramic wafer (30). The wavelength converting ceramic wafer and the support layer are diced (42) to form wavelength converting members. A wavelength converting member is attached to a light emitting device. After attaching the wavelength converting member to the light emitting device, the support layer is removed.

Abstract: A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.

Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a semiconductor light emitting device (10) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element (12) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element (12) is attached to a support (51) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions (46) of semiconductor wavelength converting material and at least one second region (48) without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection.

Abstract: In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

Abstract: An LED module includes a substrate having a high thermal conductivity and at least one LED die mounted on the substrate. A wavelength conversion material, such as phosphor or quantum dots in a binder, has a very low thermal conductivity and is formed to have a relatively high volume and low concentration over the LED die so that the phosphor or quantum dots conduct little heat from the LED die. A transparent top plate, having a high thermal conductivity, is positioned over the wavelength conversion material, and a hermetic seal is formed between the top plate and the substrate surrounding the wavelength conversion material. The LED die is located in a cavity in either the substrate or the top plate. In this way, the temperature of the wavelength conversion material is kept well below the temperature of the LED die. The sealing is done in a wafer level process.

Abstract: A process for preparing a semiconductor structure for mounting to a carrier is disclosed. The process involves causing a support material to substantially fill a void defined by surfaces formed in the semiconductor structure and causing the support material to solidify sufficiently to support the semiconductor structure when mounted to the carrier.

Abstract: Very thin flash modules for cameras are described that do not appear as a point source of light to the illuminated subject. Therefore, the flash is less objectionable to the subject. In one embodiment, the light emitting surface area is about 5 mm×10 mm. Low profile, side-emitting LEDs optically coupled to solid light guides enable the flash module to be thinner than 2 mm. The flash module may also be continuously energized for video recording. The module is particularly useful for cell phone cameras and other thin cameras.

Abstract: Embodiments of the invention include a light emitting device (LED 10), a first wavelength converting material (13, in a matrix 14 to form a layer 12), and a second wavelength converting material (forming layer 16). The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material (13) is spaced apart from the light emitting device (10).

Abstract: The invention relates to an illumination system comprising 1) a light source arranged to emit primary radiation, 2) a radiation converting element arranged to convert at least part of the primary radiation into secondary radiation, and 3) a filter arranged to block radiation generated in the illumination system having a wavelength shorter than a certain cut-off wavelength. According to the invention, the filter is designed to block a part of the secondary radiation by having arranged the cut-off wavelength of the filter in the emission spectrum of the radiation converting element. Illumination devices according to this design show emission spectra with small bandwidth.

Abstract: A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Abstract: The invention relates to an illumination system comprising 1) a light source arranged to emit primary radiation, 2) a radiation converting element arranged to convert at least part of the primary radiation into secondary radiation, and 3) a filter arranged to block radiation generated in the illumination system having a wavelength shorter than a certain cut-off wavelength. According to the invention, the filter is designed to block a part of the secondary radiation by having arranged the cut-off wavelength of the filter in the emission spectrum of the radiation converting element. Illumination devices according to this design show emission spectra with small bandwidth.

Abstract: Embodiments of the invention include a semiconductor light emitting device (10) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element (12) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element (12) is attached to a support (51) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions (46) of semiconductor wavelength converting material and at least one second region (48) without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.