Abstract: A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region.

Abstract: A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.

Abstract: A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region.