Abstract: A pulse-assisted LSP broadband light source in flowing high-pressure liquid or supercritical fluid is disclosed. The light source includes a fluid containment structure for containing a high-pressure liquid or supercritical fluid. The light source includes a primary laser pump source and a high-repetition pulse-assisting laser light source. wherein the primary laser pump source is configured to direct a primary pump beam into a plasma-forming region of the fluid. The primary beam and the pulsed-assisting beam are configured to sustain a plasma within the plasma-forming region of the fluid within the fluid containment structure. A light collector element is configured to collect broadband light emitted from the plasma for use in downstream applications.

Abstract: A plasma lamp is disclosed. The plasma lamp includes a gas containment structure configured to contain a gas and generate a plasma within the gas containment structure. The gas containment structure is formed from a glass material transparent to illumination from a pump laser and the broadband radiation emitted by the plasma. The gas containment structure includes a glass wall and the glass within the glass wall includes an OH concentration distribution that varies across a thickness of the glass wall.

Abstract: A plasma lamp is disclosed. The plasma lamp includes a gas containment structure configured to contain a gas and generate a plasma within the gas containment structure. The gas containment structure is formed from a glass material transparent to illumination from a pump laser and the broadband radiation emitted by the plasma. The gas containment structure includes a glass wall and the glass within the glass wall includes an OH concentration distribution that varies across a thickness of the glass wall.

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as xenon, that is coated on the outer surface of a drum. Bearing systems rotate the drum that have structures for reducing leakage of contaminant material and/or bearing gas into the LPP chamber. Injection systems are disclosed for coating and replenishing target material on the drum. Wiper systems are disclosed for preparing the target material surface on the drum, e.g. smoothing the target material surface. Systems for cooling and maintaining the temperature of the drum and a housing overlying the drum are also disclosed.

Abstract: The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers.

Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a clean, hard X-ray illumination source are described herein. More specifically, a laser produced plasma light source generates high brightness, hard x-ray illumination having energy in a range of 25,000 to 30,000 electron volts. To achieve high brightness, a highly focused, very short duration laser beam is focused onto a dense Xenon target in a liquid or solid state. The interaction of the focused laser pulse with the high density Xenon target ignites a plasma. Radiation from the plasma is collected by collection optics and is directed to a specimen under measurement. The resulting plasma emission is relatively clean because of the use of a non-metallic target material. The plasma chamber is filled with Xenon gas to further protect optical elements from contamination. In some embodiments, evaporated Xenon from the plasma chamber is recycled back to the Xenon target generator.

Abstract: X-ray imaging and classification of volume defects within a three-dimensional structure includes identifying one or more volume defects within a three-dimensional structure of a sample and acquiring, with a transmission-mode x-ray diffraction imaging tool, one or more coherent diffraction images of the one or more identified volume defects. The process includes classifying the one or more volume defects within a volume of the three-dimensional structure based on the one or more coherent diffraction images, and training an additional optical or electron-based inspection tool based on the one or more classified defects.

Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as xenon, that is coated on the outer surface of a drum. Bearing systems rotate the drum that have structures for reducing leakage of contaminant material and/or bearing gas into the LPP chamber. Injection systems are disclosed for coating and replenishing target material on the drum. Wiper systems are disclosed for preparing the target material surface on the drum, e.g. smoothing the target material surface. Systems for cooling and maintaining the temperature of the drum and a housing overlying the drum are also disclosed.

Abstract: The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as Xenon, that is coated on the outer surface of a drum. Embodiments include bearing systems for rotating the drum that have structures for reducing leakage of contaminant material and/or bearing gas into the LPP chamber. Injection systems are disclosed for coating and replenishing target material on the drum. Wiper systems are disclosed for preparing the target material surface on the drum, e.g. smoothing the target material surface. Systems for cooling and maintaining the temperature of the drum and a housing overlying the drum are also disclosed.

Abstract: The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

Abstract: A system for generating broadband radiation is disclosed. The system includes a target material source configured to deliver one or more of a liquid or solid state target material to a plasma-forming region of a chamber. The system further includes a pump source configured to generate pump radiation to excite the target material in the plasma forming region of the chamber to generate broadband radiation. The system is further configured to transmit at least a portion of the broadband radiation generated in the plasma-forming region of the chamber out of the chamber through a windowless aperture.

Abstract: Methods and systems for x-ray based semiconductor metrology utilizing a broadband, soft X-ray illumination source are described herein. A laser produced plasma (LPP) light source generates high brightness, broadband, soft x-ray illumination. The LPP light source directs a highly focused, short duration laser source to a non-metallic droplet target in a liquid or solid state. In one example, a droplet generator dispenses a sequence of nominally 50 micron droplets of feed material at a rate between 50 and 400 kilohertz. In one aspect, the duration of each pulse of excitation light is less than one nanosecond. In some embodiments, the duration of each pulse of excitation light is less than 0.5 nanoseconds. In some embodiments, the LPP light source includes a gas separation system that separates unspent feed material from other gases in the plasma chamber and provides the separated feed material back to the droplet generator.

Abstract: Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

Abstract: The present disclosure is directed to laser produced plasma light sources having a target material, such as Xenon, that is coated on the outer surface of a drum. Embodiments include bearing systems for rotating the drum that have structures for reducing leakage of contaminant material and/or bearing gas into the LPP chamber. Injection systems are disclosed for coating and replenishing target material on the drum. Wiper systems are disclosed for preparing the target material surface on the drum, e.g. smoothing the target material surface. Systems for cooling and maintaining the temperature of the drum and a housing overlying the drum are also disclosed.