Abstract: A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.

Abstract: A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.

Abstract: An article, such as a solar cell or module, is presented. In one embodiment, the article includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a reflective material configured to scatter at least 50% of light incident on the filler material. Another embodiment is an article that includes a photovoltaically active region and a photovoltaically inactive region. A filler material is disposed in the inactive region; the filler material includes a wavelength converting material. Other embodiments are described herein in which the filler material described above and disposed in the inactive region includes both the reflective material and the wavelength converting material.

Abstract: A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device.

Abstract: A phototransistor (400) comprises an emitter (43) comprising antimony, a base (42) comprising antimony, and a collector (41) comprising antimony. Preferably, the emitter, the base and the collector each comprises at least one of AlInGaAsSb, AlGaAsSb, AlGaSb, GaSb and InGaAsSb. The base comprises an emitter-contacting portion (41b) with a base-contacting portion (43a) of the emitter. The collector comprises a base-contacting portion (41b) which is in contact with a collector-contacting portion (421a) of the base. The phototransistor produces an internal gain upon being contacted with light within a receivable wavelength range, preferably greater than 1.7 micrometers. Also, a method of detecting light using such a phototransistor.

Abstract: The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.

Abstract: A method of electrochemically processing an article having a semi-insulating element and a conducting element comprises forming a conductive layer on the article, the conductive layer comprising at least a first region covering at least a portion of the semi-insulating element and a second region covering at least a portion of the conducting element; gripping with at least one conductive gripper a portion of the first region; submerging at least a portion of the second region in an electrolyte while keeping the conductive gripper out of said electrolyte; and conducting current through a circuit comprising the conducting element, the conductive layer, the conductive gripper, and an electrode submerged in the electrolyte. The conductive layer is preferably formed by diffusing a dopant from a vapor phase.