Patents by Inventor OLEG TCHERNYSHYOV

OLEG TCHERNYSHYOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoelectric memory cells with domain-wall-mediated switching
    Patent number: 10090034
    Abstract: A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: October 2, 2018
    Assignees: BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA, THE JOHN HOPKINS UNIVERSITY, INTEL CORPORATION
    Inventors: Kirill D. Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri E. Nikonov
  • MAGNETOELECTRIC MEMORY CELLS WITH DOMAIN-WALL-MEDIATED SWITCHING
    Publication number: 20180130511
    Abstract: A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.
    Type: Application
    Filed: November 8, 2017
    Publication date: May 10, 2018
    Applicants: Board of Regents of the University of Nebraska, The John Hopkins University, Intel Corporation
    Inventors: KIRILL D. BELASHCHENKO, OLEG TCHERNYSHYOV, ALEXEY KOVALEV, DMITRI E. NIKONOV