Patents by Inventor Oleh P. Karpenko

Oleh P. Karpenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE
    Publication number: 20160308078
    Abstract: A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.
    Type: Application
    Filed: June 29, 2016
    Publication date: October 20, 2016
    Inventors: Oleh P. Karpenko, Thomas A. Sorenson, Jianjun Wang
  • Back contact for a photovoltaic module
    Patent number: 9461186
    Abstract: The present invention relates to photovoltaic modules and methods of manufacturing photovoltaic modules.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: October 4, 2016
    Assignee: FIRST SOLAR, INC.
    Inventors: Sreenivas Jayaraman, Oleh P. Karpenko
  • Electrical contact
    Patent number: 9412886
    Abstract: A photovoltaic device with a low-resistance stable electrical back contact is disclosed. The photovoltaic device can have a CuTex or CuTexNy layer.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: August 9, 2016
    Assignee: First Solar, Inc.
    Inventors: Pratima V. Addepalli, Sreenivas Jayaraman, Oleh P. Karpenko
  • Method of etching a semiconductor layer of a photovoltaic device
    Patent number: 9397238
    Abstract: A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: July 19, 2016
    Assignee: FIRST SOLAR, INC.
    Inventors: Jianjun Wang, Oleh P. Karpenko, Thomas A. Sorenson
  • Photovoltaic device with protective layer over a window layer and method of manufacture of the same
    Patent number: 9276154
    Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.
    Type: Grant
    Filed: February 3, 2014
    Date of Patent: March 1, 2016
    Assignee: FIRST SOLAR, INC.
    Inventors: Daniel Damjanovic, Jing Guo, Sreenivas Jayaraman, Oleh P. Karpenko, Feng Liao, Chong Lim, Rick C. Powell, Jigish Trivedi, Zhibo Zhao
  • PHOTOVOLTAIC DEVICE INTERCONNECT
    Publication number: 20150031165
    Abstract: Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.
    Type: Application
    Filed: September 11, 2014
    Publication date: January 29, 2015
    Inventors: Oleh P. Karpenko, Jianjun Wang
  • PHOTOVOLTAIC DEVICE WITH PROTECTIVE LAYER OVER A WINDOW LAYER AND METHOD OF MANUFACTURE OF THE SAME
    Publication number: 20140216535
    Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.
    Type: Application
    Filed: February 3, 2014
    Publication date: August 7, 2014
    Applicant: FIRST SOLAR, INC.
    Inventors: Daniel Damjanovic, Jing Guo, Sreenivas Jayaraman, Oleh P. Karpenko, Feng Liao, Chong Lim, Rick C. Powell, Jigish Trivedi, Zhibo Zhao
  • Photovoltaic back contact
    Patent number: 8603253
    Abstract: A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: December 10, 2013
    Assignee: First Solar, Inc.
    Inventors: Pratima V. Addepalli, John S. Deeken, Oleh P. Karpenko
  • METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE
    Publication number: 20130068301
    Abstract: A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.
    Type: Application
    Filed: September 11, 2012
    Publication date: March 21, 2013
    Inventors: Jianjun Wang, Oleh P. Karpenko, Thomas A. Sorenson
  • PHOTOVOLTAIC DEVICE INTERCONNECT
    Publication number: 20120048333
    Abstract: Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.
    Type: Application
    Filed: August 29, 2011
    Publication date: March 1, 2012
    Inventors: Oleh P. Karpenko, Jianjun Wang
  • ELECTRICAL CONTACT
    Publication number: 20120042929
    Abstract: A photovoltaic device with a low-resistance stable electrical back contact is disclosed. The photovoltaic device can have a CuTex or CuTexNy layer.
    Type: Application
    Filed: August 22, 2011
    Publication date: February 23, 2012
    Inventors: Pratima V. Addepalli, Sreenivas Jayaraman, Oleh P. Karpenko
  • Back Contact Formation
    Publication number: 20120024338
    Abstract: A photovoltaic cell may include a carbon residue and a copper ion on a cadmium telluride layer.
    Type: Application
    Filed: July 19, 2011
    Publication date: February 2, 2012
    Inventors: Pratima V. Addepalli, John S. Deeken, Oleh P. Karpenko
  • BACK CONTACT FOR A PHOTOVOLTAIC MODULE
    Publication number: 20120012151
    Abstract: The present invention relates to photovoltaic modules and methods of manufacturing photovoltaic modules.
    Type: Application
    Filed: July 14, 2011
    Publication date: January 19, 2012
    Inventors: Sreenivas Jayaraman, Oleh P. Karpenko
  • Photovoltaic device back contact
    Publication number: 20110146784
    Abstract: A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate, depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer, and doping the molybdenum nitride with a copper dopant.
    Type: Application
    Filed: December 16, 2010
    Publication date: June 23, 2011
    Applicant: First Solar, Inc.
    Inventors: Pratima V. Addepalli, Oleh P. Karpenko, Thomas W. Shields
  • PHOTOVOLTAIC BACK CONTACT
    Publication number: 20110061736
    Abstract: A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.
    Type: Application
    Filed: September 10, 2010
    Publication date: March 17, 2011
    Applicant: First Solar, inc.
    Inventors: Pratima V. Addepalli, John S. Deeken, Oleh P. Karpenko
  • In-situ sequential high density plasma deposition and etch processing for gap fill
    Patent number: 7223701
    Abstract: During microelectronic processing of a substrate, a gap on the substrate surface may be filled with a material by alternating deposition and etch processes while the substrate remains in the same process chamber. Alternating deposition and etch processes allows the gap to be completely filled absent a void.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: May 29, 2007
    Assignee: Intel Corporation
    Inventors: Kyu S. Min, Oleh P. Karpenko
  • Method and apparatus for self-aligned MOS patterning
    Patent number: 7153780
    Abstract: A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: December 26, 2006
    Assignee: Intel Corporation
    Inventors: Ervin T. Hill, Oleh P. Karpenko, Gordon T. McGarvey, Linda N. Marquez
  • In-situ sequential high density plasma deposition and etch processing for gap fill
    Publication number: 20040048485
    Abstract: During microelectronic processing of a substrate, a gap on the substrate surface may be filled with a material by alternating deposition and etch processes while the substrate remains in the same process chamber. Alternating deposition and etch processes allows the gap to be completely filled absent a void.
    Type: Application
    Filed: September 6, 2002
    Publication date: March 11, 2004
    Inventors: Kyu S. Min, Oleh P. Karpenko