Abstract: A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

Abstract: A method includes forming a first electrode layer over a substrate, forming an ovonic threshold switch (OTS) material layer over the first electrode layer, microwave annealing the OTS material layer, and forming a second electrode layer over the OTS material layer.

Abstract: A method includes forming a first electrode layer over a substrate, forming an ovonic threshold switch (OTS) material layer over the first electrode layer, microwave annealing the OTS material layer, and forming a second electrode layer over the OTS material layer.

Abstract: A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

Abstract: A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.

Abstract: Embodiments disclosed herein generally relate to an electrode structure for a resistive random access memory (ReRAM) device cell which focuses the electric field at a center of the cell and methods for making the same. As such, a non-uniform metallic electrode may be deposited onto the ReRAM device which is subsequently exposed to an oxidation or nitrogenation process during cell fabrication. The electrode structure may be conical or pyramid shaped, and comprise at least one layer comprising a first material and a second material, wherein the concentration of the first material and the second material are varied based on location within the electrode. A metal electrode profile is formed which favors the center of the cell as the location with the greatest electric field. As such, size scaling and reliability of the non-volatile memory component are each increased.

Abstract: According to one embodiment, a magnetic recording medium includes: a substrate, a seed layer positioned above the substrate, and a magnetic recording layer structure positioned above the seed layer. The magnetic recording layer structure includes: a first magnetic recording layer having a plurality of FePtCu magnetic grains and a first segregant, and a second magnetic recording layer positioned above the first magnetic recording layer, the second magnetic recording layer having a plurality of FePt magnetic grains and a second segregant, where a Curie temperature of the first magnetic recording layer is lower than a Curie temperature of the second magnetic recording layer.

Abstract: A magnetic medium for perpendicular magnetic data recording having improved corrosion characteristics and reduced surface roughness. The magnetic medium includes an under-layer and a perpendicular magnetic recording layer formed over the under-layer. The under-layer can be formed of MgO and has an oxygen concentration that is greater at the perpendicular magnetic recording layer than it is away from the perpendicular magnetic recording layer.

Abstract: According to one embodiment, a magnetic medium includes a plasmonic underlayer having an Au alloy, where the Au alloy includes one or more alloying components that are substantially immiscible in Au; and a magnetic recording layer above the plasmonic underlayer. According to another embodiment, a magnetic medium, includes a multilayered plasmonic underlayer; and a magnetic recording layer above the multilayered plasmonic underlayer.

Abstract: A method for etching a media is disclosed. A first magnetic layer comprising grains is deposited with a segregant such that a portion of the first segregant covers a top surface of the grains of the first magnetic layer and a second portion of the first segregant separates the grains of the first magnetic layer. The first segregant is etched to remove the portion of the first segregant that covers the top surface of the grains.

Abstract: According to one embodiment, a magnetic recording medium includes: a substrate, a seed layer positioned above the substrate, and a magnetic recording layer structure positioned above the seed layer. The magnetic recording layer structure includes: a first magnetic recording layer having a plurality of FePtCu magnetic grains and a first segregant, and a second magnetic recording layer positioned above the first magnetic recording layer, the second magnetic recording layer having a plurality of FePt magnetic grains and a second segregant, where a Curie temperature of the first magnetic recording layer is lower than a Curie temperature of the second magnetic recording layer.

Abstract: In one embodiment, a magnetic media suitable for HAMR recording includes a recording layer having first and second magnetic layers. The first magnetic layer has a first segregant between magnetic grains thereof, the first segregant being primarily C. Moreover, the second magnetic layer is formed above the first magnetic layer. The second magnetic layer has a second segregant between magnetic grains thereof, the second segregant being primarily C and a second component. Additional systems and methods are also described herein.

Abstract: According to one embodiment, a magnetic recording medium includes a substrate, and a magnetic recording layer structure positioned above the substrate, the magnetic recording layer structure including: a first magnetic recording layer having a first plurality of magnetic grains surrounded by a first segregant; a second magnetic recording layer positioned above the first magnetic recording layer, the second magnetic recording layer having a second plurality of magnetic grains surrounded by a second segregant; and a third magnetic recording layer positioned above the second magnetic recording layer, the third magnetic recording layer having a third plurality of magnetic grains surrounded by a third segregant, where at least the first segregant is primarily a combination of carbon and a second component, and where the second segregant is primarily carbon.

Abstract: An “all optical switching” (AOS) magnetic recording system, i.e., one that does not require a magnetic field to reverse the magnetization in the magnetic recording media, uses a FeMnPt L10 alloy as the magnetic media. A FeMnPt alloy, with appropriate amounts of Mn, will have high magneto-crystalline anisotropy, but also ferrimagnetic spin alignment for triggering AOS. The combination of high magneto-crystalline anisotropy and ferrimagnetic spin configuration enables the FeMnPt media to function as magnetic media whose magnetization can be switched solely by polarized laser pulses. The FeMnPt media for may be a single layer with or without any segregants. Alternatively, the FeMnPt media may be a multilayered recording layer comprising alternating layers of FePt and MnPt L10 ordered alloys. The segregant-free embodiments of the FeMnPt material may be patterned to form bit-patterned-media (BPM).

Abstract: According to one embodiment, a magnetic medium includes a plasmonic underlayer having an Au alloy, where the Au alloy includes one or more alloying components that are substantially immiscible in Au; and a magnetic recording layer above the plasmonic underlayer. According to another embodiment, a magnetic medium, includes a multilayered plasmonic underlayer; and a magnetic recording layer above the multilayered plasmonic underlayer.

Abstract: An “all optical switching” (AOS) magnetic recording system, i.e., one that does not require a magnetic field to reverse the magnetization in the magnetic recording media, uses a FeMnPt L10 alloy as the magnetic media. A FeMnPt alloy, with appropriate amounts of Mn, will have high magneto-crystalline anisotropy, but also ferrimagnetic spin alignment for triggering AOS. The combination of high magneto-crystalline anisotropy and ferrimagnetic spin configuration enables the FeMnPt media to function as magnetic media whose magnetization can be switched solely by polarized laser pulses. The FeMnPt media for may be a single layer with or without any segregants. Alternatively, the FeMnPt media may be a multilayered recording layer comprising alternating layers of FePt and MnPt L10 ordered alloys. The segregant-free embodiments of the FeMnPt material may be patterned to form bit-patterned-media (BPM).

Abstract: In one embodiment, a magnetic media suitable for HAMR recording includes a recording layer having first and second magnetic layers. The first magnetic layer has a first segregant between magnetic grains thereof, the first segregant being primarily C. Moreover, the second magnetic layer is formed above the first magnetic layer. The second magnetic layer has a second segregant between magnetic grains thereof, the second segregant being primarily C and a second component. Additional systems and methods are also described herein.

Abstract: A magnetic medium for perpendicular magnetic data recording having improved corrosion characteristics and reduced surface roughness. The magnetic medium includes an under-layer and a perpendicular magnetic recording layer formed over the under-layer. The under-layer can be formed of MgO and has an oxygen concentration that is greater at the perpendicular magnetic recording layer than it is away from the perpendicular magnetic recording layer.

Abstract: A method for etching a media is disclosed. A first magnetic layer comprising grains is deposited with a segregant such that a portion of the first segregant covers a top surface of the grains of the first magnetic layer and a second portion of the first segregant separates the grains of the first magnetic layer. The first segregant is etched to remove the portion of the first segregant that covers the top surface of the grains.