Patents by Inventor Olga KLIN

Olga KLIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor photo-detector
    Patent number: 10079262
    Abstract: A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: September 18, 2018
    Assignee: SEMI CONDUCTOR DEVICES—AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
    Inventors: Philip Klipstein, Olga Klin, Eliezer Weiss
  • SEMICONDUCTOR DEVICE
    Publication number: 20170179185
    Abstract: A semiconductor device is disclosed, which includes: at least one device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.
    Type: Application
    Filed: February 27, 2017
    Publication date: June 22, 2017
    Inventors: Philip Klipstein, Olga Klin, Eliezer Weiss
  • Semiconductor device
    Patent number: 9613999
    Abstract: A semiconductor device is disclosed, which includes: at least one a device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: April 4, 2017
    Assignee: SEMI CONDUCTOR DEVICES—AN ELBIT SYSTEMS-RAFAEL PARTNERSHIP
    Inventors: Philip Klipstein, Olga Klin, Eliezer Weiss
  • SEMICONDUCTOR DEVICE
    Publication number: 20160307956
    Abstract: A semiconductor device is disclosed, which includes: at least one a device layer being a crystallized layer for example including: a superlattice layer and/or a layer of group III-V semiconductor materials; and a passivation structure comprising one or more layers wherein at least one layer of the passivation structure is a passivation layer grown in-situ in a crystallized form on top of the device layer, and at least one of the one or more layers of the passivation structure includes material having a high density of surface states which forces surface pinning of an equilibrium Fermi level within a certain band gap of the device layer, away from its conduction and valence bands.
    Type: Application
    Filed: April 14, 2016
    Publication date: October 20, 2016
    Inventors: Philip KLIPSTEIN, Olga KLIN, Eliezer WEISS