Patents by Inventor Olga Regelman

Olga Regelman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10615004
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: April 7, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190287765
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Patent number: 10418225
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10373807
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 6, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10312056
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190057841
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 21, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Publication number: 20190057840
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 21, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Publication number: 20190051496
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: August 9, 2018
    Publication date: February 14, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Publication number: 20180053631
    Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
    Type: Application
    Filed: October 13, 2017
    Publication date: February 22, 2018
    Inventors: Leonid Dorf, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, James D. Carducci, Hamid Tavassoli, Olga Regelman, Ying Zhang
  • Patent number: 9799491
    Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Leonid Dorf, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, James D. Carducci, Hamid Tavassoli, Olga Regelman, Ying Zhang
  • Publication number: 20170125217
    Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.
    Type: Application
    Filed: May 4, 2016
    Publication date: May 4, 2017
    Inventors: Leonid Dorf, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, James D. Carducci, Hamid Tavassoli, Olga Regelman, Ying Zhang
  • Patent number: 9570275
    Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: February 14, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Olga Regelman, Kallol Bera, Douglas A. Buchberger, Jr., Paul Brillhart
  • Patent number: 9196462
    Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: November 24, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Olga Regelman
  • Publication number: 20150053794
    Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
    Type: Application
    Filed: November 3, 2014
    Publication date: February 26, 2015
    Inventors: James D. CARDUCCI, Olga REGELMAN, Kallol BERA, Douglas A. BUCHBERGER, JR., Paul BRILLHART
  • Patent number: 8876024
    Abstract: The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
    Type: Grant
    Filed: January 10, 2008
    Date of Patent: November 4, 2014
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Olga Regelman, Kallol Bera, Douglas A. Buchberger, Paul Brillhart
  • Publication number: 20130327480
    Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
    Type: Application
    Filed: October 11, 2012
    Publication date: December 12, 2013
    Applicant: Applied Materials, Inc.
    Inventors: James D. Carducci, Olga Regelman
  • Patent number: 7777599
    Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Daniel J. Hoffman, Matthew L. Miller, Olga Regelman, Kenneth S. Collins, Kartik Ramaswamy, Kallol Bera
  • Publication number: 20090179085
    Abstract: The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
    Type: Application
    Filed: January 10, 2008
    Publication date: July 16, 2009
    Inventors: JAMES D. CARDUCCI, Olga Regelman, Kallol Bera, Douglas A. Buchberger, Paul Brillhart
  • Publication number: 20090178763
    Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
    Type: Application
    Filed: December 30, 2008
    Publication date: July 16, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Olga Regelman
  • Publication number: 20090140828
    Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
    Type: Application
    Filed: November 2, 2007
    Publication date: June 4, 2009
    Applicant: APPLIED MATERIALS, INC
    Inventors: Steven C. Shannon, Daniel J. Hoffman, Matthew L. Miler, Olga Regelman, Kenneth S. Collins, Kartik Ramaswamy, Kallol Bera