Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: A lithographic apparatus including a uniformity correction system is disclosed. Fingers move into and out of intersection with a radiation beam to correct an intensity of the radiation beam. Actuating devices are coupled to the fingers. A width of a tip of each of the fingers is half that of a width of the actuating devices. Systems and methods compensate for uniformity drift. An illumination slit uniformity caused by system drift is measured. First positions of uniformity compensators are determined based on the uniformity. Uniformity compensators are moved to the first respective positions. A substrate is exposed.

Abstract: A method is disclosed for the manufacture of microstructures and devices. The method is relatively easy to implement, and has the capability to produce features having a resolution of ten microns or smaller with a high aspect ratio (60, 75, 100, 200, or even higher). A master mask, appropriately designed and fabricated, is used in an initial exposure step with visible light, ultraviolet light, x-rays, an electron beam, or an ion beam to make a "transfer mask" directly on the surface of the sample. It is not necessary to produce an expensive x-ray master mask, even if x-ray exposure of the sample is desired. There is no necessity for gap control during exposure of the resist through the transfer mask. The resulting structures may, if desired, have a higher aspect ratio than microstructures that have previously been produced through other methods. The "transfer mask" is not a unit separate from the sample, but is formed directly on the surface of each sample.