Abstract: The embodiments of the invention cover a ceramic sputtering target comprising at least 85 wt. % of an (In4Sn3O12 phase, wherein the ceramic sputtering target has a density of greater than 7.0 g/cm3. A method of forming an ITO ceramic sputtering target is also described by combining 53 to 65 wt. % of In2O3 and 35 to 47 wt. % of SnO2 to form a first In2O3/SnO2 mixture; mixing and milling the In2O3/SnO2 mixture in the presence of water and a dispersing agent until a first slurry is formed, wherein the average particle size of the first slurry is between 0.3-0.7 ?m and wherein the specific surface area is between 4-8.5 m2/g; drying the first slurry to form a powder; heat treating the powder at 1300 to 1500° C. to form a compound having an In4Sn3O12 phase; adding additional In2O3 and SnO2 to the compound having the In4Sn3O12 phase thereby forming an In—Sn—O-based mixture having an atomic In/Sn ratio of 1.33; forming the ITO ceramic sputtering target.

Abstract: The embodiments of the invention cover a ceramic sputtering target comprising at least 85 wt. % of an (In4Sn3O12 phase, wherein the ceramic sputtering target has a density of greater than 7.0 g/cm3. A method of forming an ITO ceramic sputtering target is also described by combining 53 to 65 wt. % of In2O3 and 35 to 47 wt. % of SnO2 to form a first In2O3/SnO2 mixture; mixing and milling the In2O3/SnO2 mixture in the presence of water and a dispersing agent until a first slurry is formed, wherein the average particle size of the first slurry is between 0.3-0.7 ?m and wherein the specific surface area is between 4-8.5 m2/g; drying the first slurry to form a powder; heat treating the powder at 1300 to 1500° C. to form a compound having an In4Sn3O12 phase; adding additional In2O3 and SnO2 to the compound having the In4Sn3O12 phase thereby forming an In—Sn—O-based mixture having an atomic In/Sn ratio of 1.33; forming the ITO ceramic sputtering target.

Abstract: The invention describes a sputtering target comprising a ceramic body having tin oxide as a major constituent and between 0.5 and 15 wt % of at least two other oxides, one of which being antimony oxide, the target having a density of at least 90%, and preferably at least 95%, of the theoretical density (TD) and an electrical resistivity of less than 50 Ohm·cm, and the target having a planar or rotary configuration with a sputtering area of at least 10 cm2, and preferably at least 20 cm2. Also described is a process for manufacturing this sputtering target according comprising the steps of: —providing for a slurry comprising tin oxide and said at least two other oxides, —shaping of a green body from said slurry, and drying said green body, —firing of said green body at a temperature between 1050 and 1250° C., thereby obtaining a pre-shaped target, and —grinding of said pre-shaped target to its final dimensions.