Patents by Inventor Oliver Aneurin Williams

Oliver Aneurin Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FILTER ELEMENT FOR FLUID FILTRATION
    Publication number: 20240091689
    Abstract: A filter element for filtering a fluid is described. The filter element comprises diamond particles fixed to a filter substrate. Also described is a method for the manufacture of the filter element and a filtration device comprising the filter element.
    Type: Application
    Filed: November 18, 2020
    Publication date: March 21, 2024
    Inventors: Henry Alexander BLAND, Soumen MANDAL, Oliver Aneurin WILLIAMS
  • Semiconductor on diamond substrate, precursor for use in preparing a semiconductor on diamond substrate, and methods for making the same
    Patent number: 11791157
    Abstract: The invention provides a method 100 of manufacturing a precursor 105a for use in manufacturing a semiconductor-on-diamond substrate 110, the method comprising: a) starting with a base substrate 112; b) forming a sacrificial carrier layer 114 on the base substrate, the sacrificial carrier layer comprising a single-crystal semiconductor; c) forming a single-crystal nucleation layer 116 on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth; and d) forming a device layer 118 on the single-crystal nucleation layer, the device layer comprising a single-crystal semiconductor layer or multiple single-crystal semiconductor layers.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: October 17, 2023
    Assignee: THE UNIVERSITY OF BRISTOL
    Inventors: Martin Hermann Hans Kuball, James Wayne Pomeroy, Michael John Uren, Oliver Aneurin Williams
  • PREPARING A SEMICONDUCTOR ON DIAMOND SUBSTRATE, AND METHODS FOR MAKING THE SAME
    Publication number: 20210183648
    Abstract: The invention provides a method 100 of manufacturing a precursor 105a for use in manufacturing a semiconductor-on-diamond substrate 110, the method comprising: a) starting with a base substrate 112; b) forming a sacrificial carrier layer 114 on the base substrate, the sacrificial carrier layer comprising a single-crystal semiconductor; c) forming a single-crystal nucleation layer 116 on the sacrificial carrier layer, the single-crystal nucleation layer arranged to nucleate diamond growth; and d) forming a device layer 118 on the single-crystal nucleation layer, the device layer comprising a single-crystal semiconductor layer or multiple single-crystal semiconductor layers.
    Type: Application
    Filed: February 25, 2021
    Publication date: June 17, 2021
    Inventors: Martin Hermann Hans Kuball, James Wayne Pomeroy, Miichael John Uren, Oliver Aneurin Williams