Abstract: A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.

Abstract: A holding apparatus (100) designed to electrostatically hold a component (1), e.g., a silicon wafer, includes a base body (10) produced from at least one plate (11, 12), a plurality of projecting burls (14) arranged on an upper side (13) of the base body (10) and form a support for component (1), and an electrode device (20) having a plurality of electrodes (21) arranged on the upper side (13) in gaps between burls (14), wherein the electrode device (20) comprises a silicon carrier disk (22) having a plurality of holes (23), and the carrier disk (22) is arranged on the upper side (13) in such a manner that the burls (14) project through the holes (23) and are spaced apart from the carrier disk (22), and wherein the electrodes (21) are arranged on disk portions between the holes (23). A method for producing the holding apparatus (100) is also described.

Abstract: A holding apparatus (100) for electrostatically holding a component (1), in particular a silicon wafer, includes at least one base body (10, 10A, 10B) which is composed of a first plate (11A) and a second plate (12), the first plate (11A) being arranged on an upper side (10A) of the base body (10, 10A, 10B) and the second plate are made of an electrically insulating material, a plurality of projecting, upper burls (13A) which are arranged on the upper side (10A) of the base body (10, 10A, 10B) and form a support surface for the component (1), and a first electrode which is arranged to receive a clamping voltage, wherein the first plate (11A) is made of an electrically conductive, silicon-including ceramic and forms the first electrode. A method for producing the holding apparatus (100) is also described.

Abstract: Holding apparatus (100) for electrostatically holding component (1), (e.g., a silicon wafer), includes base body (10) composed of first and second plates (11A,12), the first plate being arranged on upper side (10A) of base body (10) and second plate (12) carrying first plate (11A), and second plate (12) being an electrically insulating material, a plurality of projecting, upper burls (13A) arranged on upper side (10A) and forming a support surface for component (1), and first electrode device (20A) having first electrodes (21A) arranged on upper side (10A) for receiving a clamping voltage, wherein first plate (11A) is produced from electrically conductive, Si-based ceramic and carries upper plate insulating layer (14A) which covers upper side (10A), having upper burls (13A), and the first electrodes (21A) include electrode layers arranged on upper burls (13A) and each carry upper electrode insulating layer (15A). A method for producing the holding apparatus is also described.

Abstract: A holding apparatus (100) designed to electrostatically hold a component (1), e.g., a silicon wafer, includes a base body (10) produced from at least one plate (11, 12), a plurality of projecting burls (14) arranged on an upper side (13) of the base body (10) and form a support for component (1), and an electrode device (20) having a plurality of electrodes (21) arranged on the upper side (13) in gaps between burls (14), wherein the electrode device (20) comprises a silicon carrier disk (22) having a plurality of holes (23), and the carrier disk (22) is arranged on the upper side (13) in such a manner that the burls (14) project through the holes (23) and are spaced apart from the carrier disk (22), and wherein the electrodes (21) are arranged on disk portions between the holes (23). A method for producing the holding apparatus (100) is also described.

Abstract: Holding apparatus (100) for electrostatically holding component (1), (e.g., a silicon wafer), includes base body (10) composed of first and second plates (11A,12), the first plate being arranged on upper side (10A) of base body (10) and second plate (12) carrying first plate (11A), and second plate (12) being an electrically insulating material, a plurality of projecting, upper burls (13A) arranged on upper side (10A) and forming a support surface for component (1), and first electrode device (20A) having first electrodes (21A) arranged on upper side (10A) for receiving a clamping voltage, wherein first plate (11A) is produced from electrically conductive, Si-based ceramic and carries upper plate insulating layer (14A) which covers upper side (10A), having upper burls (13A), and the first electrodes (21A) include electrode layers arranged on upper burls (13A) and each carry upper electrode insulating layer (15A). A method for producing the holding apparatus is also described.

Abstract: A holding apparatus (100) for electrostatically holding a component (1), in particular a silicon wafer, includes at least one base body (10, 10A, 10B) which is composed of a first plate (11A) and a second plate (12), the first plate (11A) being arranged on an upper side (10A) of the base body (10, 10A, 10B) and the second plate are made of an electrically insulating material, a plurality of projecting, upper burls (13A) which are arranged on the upper side (10A) of the base body (10, 10A, 10B) and form a support surface for the component (1), and a first electrode which is arranged to receive a clamping voltage, wherein the first plate (11A) is made of an electrically conductive, silicon-including ceramic and forms the first electrode. A method for producing the holding apparatus (100) is also described.

Abstract: A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.

Abstract: A carrier structure (100), particularly for optical components, includes a carrier body (10) which is formed from ceramic with hollows (11), and at least one cover layer (21, 22) which is formed from glass, arranged on at least one surface of the carrier body (10), and is connected to the carrier body (10) by means of at least one bond connection (23, 24) produced by means of anodic bonding. Methods for producing the carrier structure (100) and the use of the carrier structure as a mirror body, carrier for optical components and/or mechanical carrier for dynamically moved components are also described.

Abstract: In a method for joining work pieces of transparent plastic material, wherein absorption layers are applied to an interface area between the work pieces to be joined and, wherein the work piece areas to be joined are firmly engaged and pressed together, and the interface area is subjected to laser radiation so that the absorption layer is heated and the work pieces are joined by welding, the absorption layer consists of carbon or gold with a thickness of 5 nm to 15 nm.