Abstract: A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

Abstract: A method for manufacturing a multi-layer MEMS component includes: providing a multi-layer substrate that has a monocrystalline carrier layer, a monocrystalline functional layer having a front side and a back side, and a bonding layer located between the back side and the carrier layer; growing a first polycrystalline layer over the front side of the monocrystalline functional layer; removing the monocrystalline carrier layer; and growing a second polycrystalline layer over the back side of the monocrystalline functional layer.

Abstract: An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode.

Abstract: A method for manufacturing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure. The method includes provision of a carrier substrate including a first surface, an application of an insulation layer onto the first surface, an epitaxial growth of a first silicon layer onto the insulation layer, a structuring of the first silicon layer for forming trenches in the first silicon layer, a passivation of the first silicon layer, whereby the trenches are filled and a passivation layer is formed on a side facing away from the first surface, a structuring of the passivation layer, sacrificial areas and functional areas being formed in the first silicon layer, and the sacrificial areas are free of the passivation layer, at least at some points, on a side facing away from the carrier substrate, and, finally, removal of the sacrificial areas.

Abstract: An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode.

Abstract: A method for manufacturing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure. The method includes provision of a carrier substrate including a first surface, an application of an insulation layer onto the first surface, an epitaxial growth of a first silicon layer onto the insulation layer, a structuring of the first silicon layer for forming trenches in the first silicon layer, a passivation of the first silicon layer, whereby the trenches are filled and a passivation layer is formed on a side facing away from the first surface, a structuring of the passivation layer, sacrificial areas and functional areas being formed in the first silicon layer, and the sacrificial areas are free of the passivation layer, at least at some points, on a side facing away from the carrier substrate, and, finally, removal of the sacrificial areas.