Patents by Inventor Oliver D. Jan

Oliver D. Jan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Carbon containing hardmask removal process using sulfur containing process gas
    Patent number: 11264249
    Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: March 1, 2022
    Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
    Inventors: Fen Dai, Tinghao Wang, Oliver D. Jan, Moo-Hyun Kim, Shawming Ma, Zhongming Liu
  • Carbon Containing Hardmask Removal Process Using Sulfur Containing Process Gas
    Publication number: 20200194277
    Abstract: Apparatus, systems, and methods for conducting a hardmask (e.g., carbon containing hardmask) removal process on a workpiece are provided. In one example implementation, a process can include admitting a process gas into a plasma chamber, generating a plasma in the plasma chamber from the process gas using an inductively coupled plasma source, and exposing the carbon containing hardmask to the plasma to remove at least a portion of the carbon containing hardmask. The process gas can include a sulfur containing gas. The process gas does not include a halogen containing gas. The inductively coupled plasma source can be separated from the plasma chamber by a grounded electrostatic shield to reduce capacitive coupling between the inductively coupled plasma source and the plasma.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 18, 2020
    Inventors: Fen Dai, Tinghao Wang, Oliver D. Jan, Moo-Hyun Kim, Shawming Ma, Zhongming Liu