Abstract: The present invention relates to aluminium oxide-based passivation layers which simultaneously act as diffusion barrier for underlying wafer layers against aluminium and other metals. Furthermore, a process and suitable compositions for the production of these layers are described.

Abstract: The present invention relates to the use of printable inks for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers, and to a corresponding process for the formation thereof.

Abstract: The present invention relates to a method for the wet-chemical edge deletion of solar cells. An etching paste is applied to the edge of a solar cell substrate surface and after the reaction is complete, the paste residue is removed. Optionally, the substrate surface is cleaned and dried. The etching paste comprises 85% H3PO4, NH4HF2 and 65% HNO3 in a ratio in the range from 7:1:1.5 to 10:1:3.5, based on the weight.

Abstract: The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers

Abstract: The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor devices. Said functional layers may serve as surface passivation layers and/or anti-reflective coatings (ARCs).

Abstract: The object of the present invention is a new inkjet printable etching composition comprising an etchant, which is activated by a second component. Thus, a further object is the use of this new composition in a process for the etching of surfaces semiconductor devices or surfaces of solar cell devices.

Abstract: The present invention relates to a fast and inexpensive method which can be carried out locally for the wet-chemical edge deletion of “solar modules” by applying etching pastes which are suitable for this purpose and, when the reaction is complete, removing the paste residues or cleaning the substrate surface in a suitable manner. An etching paste newly developed for the purpose is employed in the method.

Abstract: The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a?), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

Abstract: The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution.

Abstract: The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula (1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a?), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

Abstract: The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.