Abstract: The present disclosure relates to medicament injection devices. An injection device includes: a movable dosage programming component comprising a rotary encoder system having a predefined angular periodicity, a sensor arrangement including a first optical sensor configured to detect movement of the movable dosage programming component relative to the sensor arrangement during dosing of a medicament, wherein the first optical sensor is configured to operate in a strobe-sampling mode at a first frequency, a second optical sensor configured to detect movement of the rotary encoder system relative to the second optical sensor wherein the second optical sensor is configured to operate in a strobe-sampling mode at a second frequency lower than the first frequency, and a processor arrangement configured to, based on the detected movement, determine a medicament dosage administered by the injection device.

Abstract: A photon detection system comprising an avalanche photodiode and a voltage source for said avalanche photodiode, wherein said avalanche photodiode comprises Silicon or its heterostructures and wherein said voltage source is configured to bias said avalanche photodiode with a voltage component which is static with respect to time and a voltage component which varies with time.

Abstract: A photon detection system comprising an avalanche photo-diode, said avalanche photodiode comprising a p-n junction formed from a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type, wherein the first conductivity type is one selected from n-type or p-type and the second conductivity type is different to the first conductivity type and is selected from n-type or p-type, wherein the first semiconductor layer is a doped layer which is doped with dopants of a first conductivity type and where there is a variation in the concentration of dopants of the first conductivity type such that the first layer comprises islands of high field zones surrounded by low field zones, the high and low field zones distributed laterally in the plane of the p-n junction, wherein the dopant concentration is higher in the high field zones than the low field zones, said system further comprising a biasing unit, said biasing unit being configured to apply a voltag

Abstract: A photon detection system comprising an avalanche photodiode and a voltage source for said avalanche photodiode, wherein said avalanche photodiode comprises Silicon or its heterostructures and wherein said voltage source is configured to bias said avalanche photodiode with a voltage component which is static with respect to time and a voltage component which varies with time.