Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

Abstract: A chip arrangement including: a chip including a chip back side; a substrate including a surface with a plating; and a zinc-based solder alloy which attaches the chip back side to the plating on the surface of the substrate, the zinc-based solder alloy including, by weight, 1% to 30% aluminum, 0.5% to 20% germanium, and 0.5% to 20% gallium, wherein a balance of the zinc-based solder alloy is zinc.

Abstract: A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.

Abstract: A solder alloy is providing, the solder alloy including zinc, aluminum, magnesium and gallium, wherein the aluminum constitutes by weight 8% to 20% of the alloy, the magnesium constitutes by weight 0.5% to 20% of the alloy and the gallium constitutes by weight 0.5% to 20% of the alloy, the rest of the alloy including zinc.

Abstract: A method and a system for minimizing carrier stress of a semiconductor device are provided. In one embodiment, a semiconductor device is provided comprising a carrier comprising a mesh coated with a metallic material, and a semiconductor chip disposed over the carrier.