Abstract: There is provided a transistor comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an insulating cap; a source contact provided in contact with a first edge of the graphene layer structure; an insulator provided in contact with an opposite, second edge of the graphene layer structure; a drain contact provided in contact with the insulator, whereby there is a distance of least separation between the drain contact and the graphene layer structure along the second edge of the graphene layer structure and through the insulator; and a gate contact provided (i) over the graphene layer structure and separated therefrom by the insulating cap and/or (ii) under the graphene layer structure and separated therefrom by substrate.

Abstract: Borazine derivatives are used in the manufacture of electronic devices, in particular electroluminescent and semiconductor devices. More specifically, stable borazine derivatives include boron atoms substituted by aryl groups used in one or more layers of an electroluminescent or a semiconductor device, in particular in the emissive layer of organic light-emitting devices (OLED).

Abstract: Borazine derivatives are used in the manufacture of electronic devices, in particular electroluminescent and semiconductor devices. More specifically, stable borazine derivatives include boron atoms substituted by aryl groups used in one or more layers of an electroluminescent or a semiconductor device, in particular in the emissive layer of organic light-emitting devices (OLED).