Abstract: The present invention relates to a module that has a lower component of a module (1) having a material (3) in which at least one first structural element (4) is embedded, and an upper component of a module (2) having a material (3) in which at least a second component (16) is embedded. The upper component of the module (2) and the lower component of the module (1) are stacked, with the lower and the upper component of the module (2) being electrically connected and mechanically linked to each other. In addition, the present invention relates to a simple and cost-effective process for the production of a variety of modules. The invention makes it possible for the modules to be miniaturized with respect to surface and height and/or makes it possible to achieve greater integration by 3D packaging.

Abstract: The present invention relates to a module that has a lower component of a module (1) having a material (3) in which at least one first structural element (4) is embedded, and an upper component of a module (2) having a material (3) in which at least a second component (16) is embedded. The upper component of the module (2) and the lower component of the module (1) are stacked, with the lower and the upper component of the module (2) being electrically connected and mechanically linked to each other. In addition, the present invention relates to a simple and cost-effective process for the production of a variety of modules. The invention makes it possible for the modules to be miniaturized with respect to surface and height and/or makes it possible to achieve greater integration by 3D packaging.

Abstract: At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 ?m and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.

Abstract: At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 ?m and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.

Abstract: A connection device for random connection of a first member of first transmission/reception units with a second number of second transmission/reception units has a switching matrix that includes a third number of controllable micromechanical switching elements that are respectively activatable to establish a connection between one of the first transmission/reception units and one of the second transmission/reception units. A control circuit selectively activates the respective micromechanical switching elements to selectively establish respective connections between the first number of first transmission/reception units and the second number of transmission/reception units.

Abstract: A connection device for random connection of a first member of first transmission/reception units with a second number of second transmission/reception units has a switching matrix that includes a third number of controllable micromechanical switching elements that are respectively activatable to establish a connection between one of the first transmission/reception units and one of the second transmission/reception units. A control circuit selectively activates the respective micromechanical switching elements to selectively establish respective connections between the first number of first transmission/reception units and the second number of transmission/reception units.

Abstract: A method for producing an electronic assembly and an electronic assembly which has been correspondingly produced are specified. In this case, CMOS structures are formed in a semiconductor substrate to form a circuit and, after the CMOS structures have been formed, at least one electrical conductor is introduced, in a low-temperature process into an opening in the semiconductor substrate in such a manner that the electrical conductor is formed between a first side and a second side, which is opposite the first side, of the semiconductor substrate to connect the circuit. The electronic assembly allows a close arrangement of electronics and detectors and is suitable, for example, for a medical apparatus.