Abstract: A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Abstract: A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Abstract: The invention relates to a device for measuring a substrate for semiconductor lithography with a reference interferometer for ascertaining the change in the ambient conditions, wherein the reference interferometer comprises a means for changing the optical path length of a measurement section of the reference interferometer, wherein the means is configured to bring about a change in the refractive index.

Abstract: The present invention relates to a method, an apparatus and a computer program for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography. A method for analyzing and/or processing of a mask for lithography, in particular a mask for EUV lithography, is described, which method comprises the following steps: 1a.) generating at least one particle beam vortex; and 1b.) using the particle beam vortex for analyzing and/or processing of the mask.

Abstract: The present invention relates to a method for calibrating a measuring microscope which may be used to measure masks, in which a calibration mask is utilized in a self-calibration algorithm in order to ascertain error correction data of the measuring microscope, wherein, in the self-calibration algorithm, the calibration mask is imaged and measured in various positions in the measuring microscope in order to ascertain one or more portions of the error correction data, wherein the surface profile of the calibration mask is ascertained and utilized when determining the error correction. Moreover, the invention relates to a measuring microscope and a method for operating same.

Abstract: The invention relates to a method for capturing and compensating the influence of ambient conditions on an imaging scale (S) in a measuring microscope. Here, a modification of the optical properties in the measuring microscope that is caused by a change in the ambient conditions is measured by use of a reference measurement system, in particular an etalon, and, at the same time, an image of a reference structure with at least one reference length (L0) that is situated on a calibration mask is produced by use of a detector of the measuring microscope and a change (?L) of the reference length (L0) that is caused by the change in the ambient conditions is determined in the image of the reference structure. Subsequently, a correlation is established between the modification of the optical properties of the reference measurement system and the length change (?L) in the image, produced in the detector, of the reference structure of the calibration mask.

Abstract: The invention relates to a method for capturing and compensating the influence of ambient conditions on an imaging scale (S) in a measuring microscope. Here, a modification of the optical properties in the measuring microscope that is caused by a change in the ambient conditions is measured by use of a reference measurement system, in particular an etalon, and, at the same time, an image of a reference structure with at least one reference length (L0) that is situated on a calibration mask is produced by use of a detector of the measuring microscope and a change (?L) of the reference length (L0) that is caused by the change in the ambient conditions is determined in the image of the reference structure. Subsequently, a correlation is established between the modification of the optical properties of the reference measurement system and the length change (?L) in the image, produced in the detector, of the reference structure of the calibration mask.

Abstract: The present invention relates to a method for calibrating a measuring microscope which may be used to measure masks, in which a calibration mask is utilized in a self-calibration algorithm in order to ascertain error correction data of the measuring microscope, wherein, in the self-calibration algorithm, the calibration mask is imaged and measured in various positions in the measuring microscope in order to ascertain one or more portions of the error correction data, wherein the surface profile of the calibration mask is ascertained and utilized when determining the error correction. Moreover, the invention relates to a measuring microscope and a method for operating same.