Patents by Inventor Oliver Kienzle
Oliver Kienzle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10504681Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: GrantFiled: May 30, 2017Date of Patent: December 10, 2019Assignees: CARL ZEISS MICROSCOPY GMBH, APPLIED MATERIALS ISRAEL LTD.Inventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares, Steven Rogers
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Publication number: 20170287674Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: ApplicationFiled: May 30, 2017Publication date: October 5, 2017Inventors: Rainer KNIPPELMEYER, Oliver KIENZLE, Thomas KEMEN, Heiko MUELLER, Stephan UHLEMANN, Maximilian HAIDER, Antonio CASARES, Steven ROGERS
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Patent number: 9673024Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: GrantFiled: December 18, 2015Date of Patent: June 6, 2017Assignees: Applied Materials Israel, Ltd., Carl Zeiss Microscopy GmbHInventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares, Steven Rogers
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Publication number: 20160111251Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: ApplicationFiled: December 18, 2015Publication date: April 21, 2016Inventors: Rainer KNIPPELMEYER, Oliver KIENZLE, Thomas KEMEN, Heiko MUELLER, Stephan UHLEMANN, Maximilian HAIDER, Antonio CASARES, Steven ROGERS
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Patent number: 9224576Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: GrantFiled: January 27, 2014Date of Patent: December 29, 2015Assignees: CARL ZEISS MICROSCOPY GMBH, APPLIED MATERIALS ISRAEL, LTD.Inventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares, Steven Rogers
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Publication number: 20140158902Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: ApplicationFiled: January 27, 2014Publication date: June 12, 2014Applicants: Applied Materials Israel, Ltd., Carl Zeiss Microscopy GmbHInventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares, Steven Rogers
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Patent number: 8637834Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: GrantFiled: December 31, 2011Date of Patent: January 28, 2014Assignees: Carl Zeiss Microscopy GmbH, Applied Materials Israel, Ltd.Inventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximillian Haider, Antonio Casares, Steven Rogers
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Patent number: 8268516Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.Type: GrantFiled: November 14, 2008Date of Patent: September 18, 2012Assignee: Carl Zeiss SMS GmbHInventors: Axel Zibold, Peter Kuschnerus, Oliver Kienzle
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Patent number: 8264535Abstract: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.Type: GrantFiled: July 11, 2008Date of Patent: September 11, 2012Assignee: Carl Zeiss SMS GmbHInventors: Oliver Kienzle, Rigo Richter, Norbert Rosenkranz, Yuji Kobiyama, Thomas Scheruebl
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Publication number: 20120104252Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: ApplicationFiled: December 31, 2011Publication date: May 3, 2012Applicants: Applied Materials Israel Ltd., Carl Zeiss SMT GmbHInventors: Rainer KNIPPELMEYER, Oliver KIENZLE, Thomas KEMEN, Heiko MUELLER, Stephan UHLEMANN, Maximilian HAIDER, Antonio CASARES, Steven ROGERS
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Patent number: 8097847Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first reType: GrantFiled: June 25, 2009Date of Patent: January 17, 2012Assignees: Carl Ziess SMT AG, Applied Materials Isreal LtdInventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares
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Patent number: 7916930Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.Type: GrantFiled: September 14, 2007Date of Patent: March 29, 2011Assignee: Carl Zeiss SMS GmbHInventors: Axel Zibold, Wolfgang Harnisch, Oliver Kienzle
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Publication number: 20100266937Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.Type: ApplicationFiled: November 14, 2008Publication date: October 21, 2010Applicant: CARL ZEISS SMS GMBHInventors: Axel Zibold, Peter Kuschnerus, Oliver Kienzle
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Publication number: 20100181479Abstract: A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical to element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the firstType: ApplicationFiled: June 25, 2009Publication date: July 22, 2010Inventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares
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Publication number: 20100157046Abstract: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.Type: ApplicationFiled: July 11, 2008Publication date: June 24, 2010Inventors: Oliver Kienzle, Rigo Richter, Norbert Rosenkranz, Yuji Kobiyama, Thomas Scheruebl
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Patent number: 7554094Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.Type: GrantFiled: June 13, 2007Date of Patent: June 30, 2009Assignees: Carl Zeiss SMT A.G., Applied Materials IsraelInventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares
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Publication number: 20080069431Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.Type: ApplicationFiled: September 14, 2007Publication date: March 20, 2008Inventors: Axel Zibold, Wolfgang Harnisch, Oliver Kienzle
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Publication number: 20080054184Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.Type: ApplicationFiled: June 13, 2007Publication date: March 6, 2008Applicants: Carl Zeiss SMT AG, Applied Materials IsraelInventors: Rainer Knippelmeyer, Oliver Kienzle, Thomas Kemen, Heiko Mueller, Stephan Uhlemann, Maximilian Haider, Antonio Casares
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Patent number: 7244949Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.Type: GrantFiled: March 3, 2006Date of Patent: July 17, 2007Assignees: Carl Zeiss SMT AG, Applied Materials IsraelInventors: Rainer Knippelmeyer, Oliver Kienzle
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Publication number: 20060289804Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.Type: ApplicationFiled: March 3, 2006Publication date: December 28, 2006Applicants: Carl Zeiss SMT AG, Applied Materials IsraelInventors: Rainer Knippelmeyer, Oliver Kienzle