Abstract: A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

Abstract: A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

Abstract: A method for aspirating a first liquid medium from a sample container with a laboratory automation device, wherein the first liquid medium is above a second liquid medium, which has a higher density and/or viscosity as the first liquid medium comprises: detecting a surface position of a surface of the first liquid medium; calculating an estimated interface position of an interface between the first liquid medium and the second liquid medium from the surface position and calculating a safety position between the surface position and the estimated interface position by adding a safety offset to the estimated interface position; and lowering a pipette of the laboratory automation device into the sample container and aspirating the first liquid medium from the sample container with the pipette by generating an underpressure in the pipette until a pipette tip of the pipette reaches the safety position.

Abstract: A semiconductor device includes a semiconductor die including a first side and an opposing second side, a first metallization layer arranged on the first side, a Ni including layer arranged on the second side, wherein the Ni including layer further includes one or more of Si, Cr and Ti, and a SnSb layer arranged on the Ni comprising layer, wherein an amount of Sb in the SnSb layer is in the range of 2 wt % to 30 wt %.

Abstract: A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.

Abstract: The invention is directed to a column system for separation of particles comprising a reservoir section with a input opening; a filter section provided with a filter matrix and an output opening and a plunger having a first and a second end, the first end fitting into the reservoir section characterized in that the plunger is provided with at least one channel providing gaseous communication from the first end to the second end. The column system may be used for magnetic cell separation.

Abstract: A method of producing an oxide of manganese including reacting, in a first aqueous solution, a manganese salt and an alkali agent to form manganese hydroxide; separating the manganese hydroxide from the first solution; mixing the manganese hydroxide into an aqueous medium to form a manganese hydroxide suspension; mixing the manganese hydroxide suspension with alkali metal hydroxide to form a second aqueous solution; and oxidizing the manganese hydroxide in the second aqueous solution to form an oxide of manganese. The dried oxide of manganese includes birnessite, a maximum of 20% hausmannite, and a maximum of 10% feitknechtite, may further include a maximum of 400 ppm of anions, may have a specific surface area of at least 25 m2/g, and may have an average oxidation state of greater than 3.5.

Abstract: The invention is directed to a column system for separation of particles comprising a reservoir section with a input opening; a filter section provided with a filter matrix and an output opening and a plunger having a first and a second end, the first end fitting into the reservoir section characterized in that the plunger is provided with at least one channel providing gaseous communication from the first end to the second end. The column system may be used for magnetic cell separation.

Abstract: A method for producing electrolytic manganese dioxide with high compact density where electrolytic manganese dioxide pieces are milled in a classifying mill to produce first milled manganese dioxide particles where 30% of the particles are larger than 200 mesh and up to 95% of the particles are smaller than 325 mesh. The first milled manganese dioxide particles are milled a second time to produce manganese dioxide particles having a second particle size distribution. Also, an electrolytic manganese dioxide particle composition, wherein when the particle size distribution of the composition is plotted as a function of base-10 logarithm of the particle size, a first peak is centered at a particle size from 40-100 ?m and contributes a minimum of 20% of the area under the curve of the overall particle size distribution and a maximum of 45% of the area under the curve of the overall particle size distribution.

Abstract: A method of producing an oxide of manganese including reacting, in a first aqueous solution, a manganese salt and an alkali agent to form manganese hydroxide; separating the manganese hydroxide from the first solution; mixing the manganese hydroxide into an aqueous medium to form a manganese hydroxide suspension; mixing the manganese hydroxide suspension with alkali metal hydroxide to form a second aqueous solution; and oxidizing the manganese hydroxide in the second aqueous solution to form an oxide of manganese. The dried oxide of manganese includes birnessite, a maximum of 20% hausmannite, and a maximum of 10% feitknechtite, may further include a maximum of 400 ppm of anions, may have a specific surface area of at least 25 m2/g, and may have an average oxidation state of greater than 3.5.

Abstract: A method for producing electrolytic manganese dioxide with high compact density where electrolytic manganese dioxide pieces are milled in a classifying mill to produce first milled manganese dioxide particles where 30% of the particles are larger than 200 mesh and up to 95% of the particles are smaller than 325 mesh. The first milled manganese dioxide particles are milled a second time to produce manganese dioxide particles having a second particle size distribution. Also, an electrolytic manganese dioxide particle composition, wherein when the particle size distribution of the composition is plotted as a function of base-10 logarithm of the particle size, a first peak is centered at a particle size from 40-100 ?m and contributes a minimum of 20% of the area under the curve of the overall particle size distribution and a maximum of 45% of the area under the curve of the overall particle size distribution.

Abstract: An electrolytic manganese dioxide improved for tool wear reduction, methods for preparing the improved electrolytic manganese dioxide and for preparing a positive-electrode precursor, and a primary battery are provided. One method includes displacement-washing neutralized electrolytic manganese dioxide with a solution including a corrosion inhibitor configured to be at a first predetermined concentration. The method further includes drying the washed electrolytic manganese dioxide to collect improved electrolytic manganese dioxide including the corrosion inhibitor configured to be at a second predetermined concentration within the improved electrolytic manganese dioxide to minimize corrosion of a metal material in contact with the improved electrolytic manganese dioxide. The corrosion inhibitor includes one of a benzoate salt, a phosphate salt, a carbonate salt, a metaborate salt, a tetraborate salt, a metaperiodate salt, and a meta-aluminate salt.

Abstract: A method for preparing treated electrolytic manganese dioxide and a battery including the treated electrolytic manganese dioxide as an electrode are provided. The method for treating the electrolytic manganese dioxide includes suspending milled electrolytic manganese dioxide in an aqueous solution heated to a temperature between ambient and boiling, and adjusting an acidity of the aqueous solution to a pH of less than 3.3. The method further includes agitating the suspended milled electrolytic manganese dioxide in the aqueous solution for a predetermined amount of time to dissolve metal-containing particulates in the milled electrolytic manganese dioxide.

Abstract: An electrolytic manganese dioxide improved for tool wear reduction, methods for preparing the improved electrolytic manganese dioxide and for preparing a positive-electrode precursor, and a primary battery are provided. One method includes displacement-washing neutralized electrolytic manganese dioxide with a solution including a corrosion inhibitor configured to be at a first predetermined concentration. The method further includes drying the washed electrolytic manganese dioxide to collect improved electrolytic manganese dioxide including the corrosion inhibitor configured to be at a second predetermined concentration within the improved electrolytic manganese dioxide to minimize corrosion of a metal material in contact with the improved electrolytic manganese dioxide. The corrosion inhibitor includes one of a benzoate salt, a phosphate salt, a carbonate salt, a metaborate salt, a tetraborate salt, a metaperiodate salt, and a meta-aluminate salt.

Abstract: A method for preparing treated electrolytic manganese dioxide and a battery including the treated electrolytic manganese dioxide as an electrode are provided. The method for treating the electrolytic manganese dioxide includes suspending milled electrolytic manganese dioxide in an aqueous solution heated to a temperature between ambient and boiling, and adjusting an acidity of the aqueous solution to a pH of less than 3.3. The method further includes agitating the suspended milled electrolytic manganese dioxide in the aqueous solution for a predetermined amount of time to dissolve metal-containing particulates in the milled electrolytic manganese dioxide.

Abstract: A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.

Abstract: The power semiconductor module (1) has a heat-conducting base plate (11) on which at least three substrates (2, 3, 4, 5, 6, 7) are placed, each substrate supporting at least one power semiconductor component (8, 9) that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates (2, 3, 4, 5, 6, 7) are placed on the base plate (11) while being arranged in a single row (12), and pressing devices (15, 16), which are situated close to the substrate, are provided on both longitudinal sides (11a, 11b) of the base plate (11) while being arranged parallel to the row (12). The base plate can be pressed against a cooling surface by the pressing devices.

Abstract: A power module has several circuit units (20, 21) that are electrically connected in parallel and are provided with terminal contacts (5, 5?) which are electrically and mechanically interconnected via at least one current-conducting saddle (26). In order to create a power module which is easy to produce and in which the current-conducting saddle (26) requires little space, the saddle (26) is embodied in several parts while encompassing a terminal element (12) that can be connected in a fixed manner to a terminal contact (5) of a circuit unit (20) independently of a connecting element (25) of the saddle (26). The connecting element (25) of the saddle (26) extends on a plane that is spaced apart from the circuit unit (20) while being electrically connected to the terminal element (12).

Abstract: A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.

Abstract: Power semiconductor arrangement and method for producing it. One embodiment provides a power semiconductor module. The power semiconductor module has a baseplate with an electrically conductive structure, a housing and a connection element. The connection element is led out from the housing generally perpendicular to the baseplate and is fixed to the housing, has a first connection configured for making contact with the electrically conductive structure, and has a second connection for making electrical contact with a circuit carrier.