Abstract: A reflective semiconductor device includes an integrated circuit (IC) structure, and a pair of mirror elements over the IC structure. The pair of mirror elements are separated by a trench. Each mirror element includes a mirror layer of, for example, aluminum, on the IC structure, and a low temperature oxide (LTO) layer on the mirror layer. A high temperature oxide (HTO) layer is over the pair of mirror elements and fills the trench. A liquid crystal layer over the mirror elements provides a liquid crystal on semiconductor (LCOS) device. The two-oxide layer prevents mirror layer creep and/or agglomeration during formation of the HTO layer and provide a suitable surface for LCOS assembly without using specialized alloys.

Abstract: A method includes providing a semiconductor structure. The semiconductor structure includes a substrate having a frontside and a backside, an electrically conductive feature including copper provided at the frontside of the substrate and a low-k interlayer dielectric provided over the electrically conductive feature. A portion of the interlayer dielectric is etched. In the etch process, a surface of the electrically conductive feature is exposed. A degas process is performed, wherein the semiconductor structure is exposed to a first gas, and wherein the semiconductor structure is heated from the backside and from the frontside. A preclean process may be performed. The preclean process may include a first phase wherein the semiconductor structure is exposed to a substantially non-ionized second gas and a second phase wherein the semiconductor structure is exposed to a plasma created from the second gas.

Abstract: A method includes providing a semiconductor structure. The semiconductor structure includes a substrate having a frontside and a backside, an electrically conductive feature including copper provided at the frontside of the substrate and a low-k interlayer dielectric provided over the electrically conductive feature. A portion of the interlayer dielectric is etched. In the etch process, a surface of the electrically conductive feature is exposed. A degas process is performed, wherein the semiconductor structure is exposed to a first gas, and wherein the semiconductor structure is heated from the backside and from the frontside. A preclean process may be performed. The preclean process may include a first phase wherein the semiconductor structure is exposed to a substantially non-ionized second gas and a second phase wherein the semiconductor structure is exposed to a plasma created from the second gas.