Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).

Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.

Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

Abstract: A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.

Abstract: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).

Abstract: A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.